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IPD30N06S2L23ATMA3
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IPD30N06S2L23ATMA3

Product Overview

Category

The IPD30N06S2L23ATMA3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications such as voltage regulation and switching circuits.

Characteristics

  • High power handling capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate drive power required

Package

The IPD30N06S2L23ATMA3 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power control and management in various electronic devices and systems.

Packaging/Quantity

It is usually packaged in reels with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 30A
  • RDS(ON) (Max) @ VGS = 10V: 0.023Ω
  • Gate-Source Voltage (VGS) ±20V
  • Total Power Dissipation (PD): 88W

Detailed Pin Configuration

The IPD30N06S2L23ATMA3 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • Low on-state resistance for minimal power loss
  • High current handling capacity
  • Fast switching speed for improved efficiency
  • Robust construction for reliability in demanding applications

Advantages and Disadvantages

Advantages

  • High power handling capability
  • Low on-state resistance
  • Fast switching speed

Disadvantages

  • Higher gate capacitance compared to some alternative models
  • Sensitive to static electricity and voltage spikes

Working Principles

The IPD30N06S2L23ATMA3 operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IPD30N06S2L23ATMA3 is widely used in: - Switching power supplies - Motor control circuits - Voltage regulation modules - Inverters and converters

Detailed and Complete Alternative Models

Some alternative models to the IPD30N06S2L23ATMA3 include: - IRF3205 - FDP8878 - STP55NF06L

In conclusion, the IPD30N06S2L23ATMA3 is a versatile power MOSFET with high power handling capabilities, making it suitable for a wide range of power management applications.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPD30N06S2L23ATMA3 en soluciones técnicas

  1. What is the maximum drain-source voltage of IPD30N06S2L23ATMA3?

    • The maximum drain-source voltage is 60V.

  2. What is the continuous drain current rating of IPD30N06S2L23ATMA3?

    • The continuous drain current rating is 30A.

  3. What is the on-resistance of IPD30N06S2L23ATMA3?

    • The on-resistance is typically 0.023 ohms at Vgs=10V.

  4. Can IPD30N06S2L23ATMA3 be used in automotive applications?

    • Yes, it is designed for automotive applications.

  5. What is the operating temperature range of IPD30N06S2L23ATMA3?

    • The operating temperature range is -55°C to 175°C.

  6. Is IPD30N06S2L23ATMA3 suitable for high-frequency switching applications?

    • Yes, it is suitable for high-frequency switching due to its low on-resistance.

  7. Does IPD30N06S2L23ATMA3 have built-in protection features?

    • It has built-in overcurrent protection and thermal shutdown features.

  8. What is the gate threshold voltage of IPD30N06S2L23ATMA3?

    • The gate threshold voltage is typically 2.5V.

  9. Can IPD30N06S2L23ATMA3 be used in power management applications?

    • Yes, it is commonly used in power management solutions.

  10. What package type does IPD30N06S2L23ATMA3 come in?

    • It comes in a TO-252-3 (DPAK) package.