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IPD70N10S312ATMA1
Product Overview
Category
The IPD70N10S312ATMA1 belongs to the category of power MOSFETs.
Use
It is used as a high-performance switching device in various electronic circuits and applications.
Characteristics
- High voltage capability
- Low gate charge
- Fast switching speed
- Low on-resistance
Package
The IPD70N10S312ATMA1 is typically available in a TO-252 package.
Essence
The essence of this product lies in its ability to efficiently control and switch high voltages in electronic circuits.
Packaging/Quantity
It is commonly packaged in reels with a quantity of 2500 units per reel.
Specifications
- Drain-Source Voltage (VDS): 100V
- Continuous Drain Current (ID): 70A
- Power Dissipation (PD): 200W
- Gate-Source Voltage (VGS): ±20V
- On-Resistance (RDS(on)): 31mΩ
Detailed Pin Configuration
The IPD70N10S312ATMA1 has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- High voltage capability allows for use in high-power applications.
- Low gate charge enables fast switching speeds.
- Low on-resistance minimizes power loss and heat generation.
Advantages
- Suitable for high-power applications
- Fast switching speed
- Low power dissipation
Disadvantages
- May require additional circuitry for driving the gate due to high gate-source voltage
Working Principles
The IPD70N10S312ATMA1 operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
This power MOSFET is commonly used in: - Switching power supplies - Motor control - Inverters - LED lighting - Automotive applications
Detailed and Complete Alternative Models
Some alternative models to the IPD70N10S312ATMA1 include: - IPD60R190P6 - IPD50R380CE - IPD30N06S2L-26
In conclusion, the IPD70N10S312ATMA1 is a high-performance power MOSFET with characteristics suitable for various high-power electronic applications. Its high voltage capability, low on-resistance, and fast switching speed make it a valuable component in modern electronic designs.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPD70N10S312ATMA1 en soluciones técnicas
What is the maximum drain-source voltage of IPD70N10S312ATMA1?
- The maximum drain-source voltage of IPD70N10S312ATMA1 is 100V.
What is the continuous drain current rating of IPD70N10S312ATMA1?
- The continuous drain current rating of IPD70N10S312ATMA1 is 70A.
What is the on-state resistance (RDS(on)) of IPD70N10S312ATMA1?
- The on-state resistance (RDS(on)) of IPD70N10S312ATMA1 is typically 10mΩ at VGS = 10V.
What is the gate threshold voltage of IPD70N10S312ATMA1?
- The gate threshold voltage of IPD70N10S312ATMA1 is typically 2.5V.
What is the power dissipation of IPD70N10S312ATMA1?
- The power dissipation of IPD70N10S312ATMA1 is 300W.
Is IPD70N10S312ATMA1 suitable for high-frequency switching applications?
- Yes, IPD70N10S312ATMA1 is suitable for high-frequency switching applications due to its low RDS(on) and fast switching characteristics.
Does IPD70N10S312ATMA1 have built-in protection features?
- IPD70N10S312ATMA1 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
What is the operating temperature range of IPD70N10S312ATMA1?
- The operating temperature range of IPD70N10S312ATMA1 is -55°C to 175°C.
Can IPD70N10S312ATMA1 be used in automotive applications?
- Yes, IPD70N10S312ATMA1 is suitable for automotive applications, as it meets automotive quality and reliability standards.
What are some typical technical solutions where IPD70N10S312ATMA1 can be applied?
- IPD70N10S312ATMA1 can be applied in motor control, power supplies, DC-DC converters, and automotive systems, among other technical solutions.