Infineon Technologies
La imagen puede ser una representación.
Consulte las especificaciones para obtener detalles del producto.
IPD75N04S406ATMA1
Ver Detalle Hojas de datos

IPD75N04S406ATMA1

Introduction

The IPD75N04S406ATMA1 is a power MOSFET belonging to the category of semiconductor devices. It is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Power MOSFET
  • Use: Power switching applications
  • Characteristics: High current capability, low on-resistance, fast switching speed
  • Package: TO-252-3 (DPAK)
  • Essence: Efficient power management
  • Packaging/Quantity: Available in reels with varying quantities

Specifications

  • Voltage Rating: 40V
  • Current Rating: 75A
  • On-Resistance: 4mΩ
  • Gate Charge: 35nC
  • Operating Temperature: -55°C to 175°C
  • Mounting Type: Surface Mount

Detailed Pin Configuration

The IPD75N04S406ATMA1 follows the standard pin configuration for a TO-252-3 package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • Low on-resistance for minimal power dissipation
  • Fast switching speed for efficient power management
  • High current capability for robust performance

Advantages and Disadvantages

Advantages

  • High current handling capacity
  • Low on-resistance for reduced power loss
  • Fast switching speed for improved efficiency

Disadvantages

  • Sensitive to overvoltage conditions
  • Requires careful ESD handling during assembly

Working Principles

The IPD75N04S406ATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a voltage is applied to the gate terminal, it controls the flow of current between the source and drain terminals, enabling efficient power switching.

Detailed Application Field Plans

The IPD75N04S406ATMA1 finds extensive use in various applications, including: - Switch-mode power supplies - Motor control systems - Battery management systems - LED lighting drivers - Automotive electronics

Detailed and Complete Alternative Models

  • IPD75N04S4L-08
  • IPD75N04S4-08
  • IPD75N04S4-06

In conclusion, the IPD75N04S406ATMA1 power MOSFET offers high-performance characteristics suitable for a wide range of power switching applications, making it a versatile choice for electronic designs.

Word Count: 345

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPD75N04S406ATMA1 en soluciones técnicas

  1. What is the maximum drain-source voltage of IPD75N04S406ATMA1?

    • The maximum drain-source voltage is 40V.

  2. What is the continuous drain current rating of IPD75N04S406ATMA1?

    • The continuous drain current rating is 75A.

  3. What is the on-state resistance (RDS(on)) of IPD75N04S406ATMA1?

    • The on-state resistance is typically 4.5mΩ at VGS = 10V.

  4. Can IPD75N04S406ATMA1 be used in automotive applications?

    • Yes, it is designed for automotive applications.

  5. What is the operating temperature range of IPD75N04S406ATMA1?

    • The operating temperature range is -55°C to 175°C.

  6. Does IPD75N04S406ATMA1 have built-in ESD protection?

    • Yes, it has built-in ESD protection.

  7. What type of package does IPD75N04S406ATMA1 come in?

    • It comes in a TO-252-3 package.

  8. Is IPD75N04S406ATMA1 suitable for use in power management applications?

    • Yes, it is suitable for power management applications.

  9. What gate-source voltage is required to fully enhance IPD75N04S406ATMA1?

    • A gate-source voltage of 10V is typically required for full enhancement.

  10. Can IPD75N04S406ATMA1 be used in high-frequency switching applications?

    • Yes, it can be used in high-frequency switching applications.