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IPD90N06S4L05ATMA2

IPD90N06S4L05ATMA2

Product Overview

Category

The IPD90N06S4L05ATMA2 belongs to the category of power MOSFETs.

Use

It is used as a switching device in various electronic circuits and applications, particularly in power management and motor control systems.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge
  • Enhanced thermal performance

Package

The IPD90N06S4L05ATMA2 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power conversion and control in electronic devices and systems.

Packaging/Quantity

It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 90A
  • On-Resistance (RDS(on)): 5.4mΩ
  • Power Dissipation (PD): 200W
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPD90N06S4L05ATMA2 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low on-resistance for minimal power loss
  • High current-carrying capability
  • Fast switching speed for improved efficiency
  • Enhanced thermal performance for reliability

Advantages

  • High voltage capability
  • Low on-resistance leading to reduced power dissipation
  • Fast switching speed for improved system response
  • Enhanced thermal performance for reliability in high-power applications

Disadvantages

  • May require careful handling due to its high power capabilities
  • Sensitive to static discharge and overvoltage conditions

Working Principles

The IPD90N06S4L05ATMA2 operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can efficiently switch and control power in electronic circuits.

Detailed Application Field Plans

The IPD90N06S4L05ATMA2 finds extensive use in the following applications: - Power supplies - Motor control systems - Inverters - DC-DC converters - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the IPD90N06S4L05ATMA2 include: - IRF1405 - FDP8878 - STP80NF70

In conclusion, the IPD90N06S4L05ATMA2 is a high-performance power MOSFET with excellent characteristics suitable for a wide range of power management and control applications.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPD90N06S4L05ATMA2 en soluciones técnicas

  1. What is the maximum drain-source voltage of IPD90N06S4L05ATMA2?

    • The maximum drain-source voltage of IPD90N06S4L05ATMA2 is 60V.
  2. What is the continuous drain current rating of IPD90N06S4L05ATMA2?

    • The continuous drain current rating of IPD90N06S4L05ATMA2 is 90A.
  3. What is the on-state resistance (RDS(on)) of IPD90N06S4L05ATMA2?

    • The on-state resistance (RDS(on)) of IPD90N06S4L05ATMA2 is typically 5.4mΩ at VGS = 10V.
  4. What is the gate threshold voltage of IPD90N06S4L05ATMA2?

    • The gate threshold voltage of IPD90N06S4L05ATMA2 is typically 2V.
  5. What is the power dissipation of IPD90N06S4L05ATMA2?

    • The power dissipation of IPD90N06S4L05ATMA2 is 300W.
  6. What are the typical applications for IPD90N06S4L05ATMA2?

    • IPD90N06S4L05ATMA2 is commonly used in motor control, power supplies, and DC-DC converters.
  7. What is the operating temperature range of IPD90N06S4L05ATMA2?

    • The operating temperature range of IPD90N06S4L05ATMA2 is -55°C to 175°C.
  8. Does IPD90N06S4L05ATMA2 have built-in protection features?

    • Yes, IPD90N06S4L05ATMA2 has built-in overcurrent protection and thermal shutdown features.
  9. What is the package type of IPD90N06S4L05ATMA2?

    • IPD90N06S4L05ATMA2 comes in a TO-252-3 (DPAK) package.
  10. Is IPD90N06S4L05ATMA2 RoHS compliant?

    • Yes, IPD90N06S4L05ATMA2 is RoHS compliant, making it suitable for environmentally friendly designs.