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IPP60R190P6XKSA1
Product Overview
Category: Power MOSFET
Use: Switching applications in power supplies, motor control, and other high-power electronic devices
Characteristics: High voltage capability, low gate charge, rugged design
Package: TO-220
Essence: Power MOSFET for high-power switching applications
Packaging/Quantity: Available in reels of 250 units
Specifications
- Voltage Rating: 600V
- Current Rating: 24A
- RDS(ON): 0.19 Ohm
- Gate Charge: 40nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPP60R190P6XKSA1 features a standard TO-220 pin configuration with three pins: gate (G), drain (D), and source (S).
Functional Features
- Low RDS(ON) for reduced conduction losses
- Fast switching speed for improved efficiency
- High voltage capability for versatile applications
- Robust design for reliable performance in harsh conditions
Advantages and Disadvantages
Advantages: - High voltage capability - Low gate charge - Rugged design for reliability
Disadvantages: - Higher RDS(ON) compared to some alternative models - Larger package size compared to SMD alternatives
Working Principles
The IPP60R190P6XKSA1 operates based on the principle of field-effect transistors, utilizing the control of voltage on the gate terminal to modulate the current flow between the drain and source terminals.
Detailed Application Field Plans
The IPP60R190P6XKSA1 is suitable for a wide range of applications including: - Power supplies - Motor control systems - High-power lighting systems - Renewable energy systems
Detailed and Complete Alternative Models
Some alternative models to the IPP60R190P6XKSA1 include: - IRF840: Similar voltage and current ratings - FDPF33N25: Lower RDS(ON) but higher gate charge - STP16NF06FP: Lower voltage rating but lower RDS(ON)
In conclusion, the IPP60R190P6XKSA1 is a robust power MOSFET suitable for high-power switching applications, offering high voltage capability and low gate charge. While it has some disadvantages such as higher RDS(ON) and larger package size, it remains a popular choice for various power electronics applications.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPP60R190P6XKSA1 en soluciones técnicas
Question: What is the maximum drain-source voltage for IPP60R190P6XKSA1?
Answer: The maximum drain-source voltage for IPP60R190P6XKSA1 is 600V.Question: What is the continuous drain current rating for IPP60R190P6XKSA1?
Answer: The continuous drain current rating for IPP60R190P6XKSA1 is 24A.Question: Can IPP60R190P6XKSA1 be used in high-frequency applications?
Answer: Yes, IPP60R190P6XKSA1 is suitable for high-frequency applications due to its low input and output capacitance.Question: What is the typical on-resistance of IPP60R190P6XKSA1?
Answer: The typical on-resistance of IPP60R190P6XKSA1 is 0.19 ohms.Question: Is IPP60R190P6XKSA1 suitable for use in power supplies?
Answer: Yes, IPP60R190P6XKSA1 is commonly used in power supply applications due to its high voltage and current ratings.Question: Does IPP60R190P6XKSA1 require a heat sink for thermal management?
Answer: Depending on the application and power dissipation, a heat sink may be required for IPP60R190P6XKSA1 to ensure proper thermal management.Question: What is the gate-source threshold voltage for IPP60R190P6XKSA1?
Answer: The gate-source threshold voltage for IPP60R190P6XKSA1 typically ranges from 2V to 4V.Question: Can IPP60R190P6XKSA1 be used in automotive applications?
Answer: Yes, IPP60R190P6XKSA1 is suitable for automotive applications, including motor control and power distribution.Question: What is the maximum junction temperature for IPP60R190P6XKSA1?
Answer: The maximum junction temperature for IPP60R190P6XKSA1 is 175°C.Question: Are there any recommended gate driver ICs for driving IPP60R190P6XKSA1?
Answer: Several gate driver ICs are compatible with IPP60R190P6XKSA1, such as those designed for high-speed switching applications.