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IPW65R048CFDAFKSA1
Product Overview
Category
The IPW65R048CFDAFKSA1 belongs to the category of power MOSFETs.
Use
It is used as a high-voltage switching device in various electronic applications.
Characteristics
- High voltage capability
- Low input capacitance
- Fast switching speed
- Low on-resistance
Package
The IPW65R048CFDAFKSA1 is typically available in a TO-247 package.
Essence
This MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 650V
- Continuous Drain Current (ID): 52A
- Power Dissipation (PD): 300W
- Gate-Source Voltage (VGS): ±20V
- On-Resistance (RDS(on)): 0.048Ω
Detailed Pin Configuration
The IPW65R048CFDAFKSA1 typically has three pins: gate, drain, and source. The pin configuration is as follows: - Gate (G) - Drain (D) - Source (S)
Functional Features
- High voltage capability allows for use in high-power applications
- Low input capacitance enables fast switching speeds
- Low on-resistance minimizes power losses and improves efficiency
Advantages and Disadvantages
Advantages
- High voltage capability suitable for demanding applications
- Low on-resistance for reduced power dissipation
- Fast switching speed for improved performance
Disadvantages
- Higher cost compared to lower voltage MOSFETs
- Greater complexity in driving circuitry due to high voltage ratings
Working Principles
The IPW65R048CFDAFKSA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.
Detailed Application Field Plans
The IPW65R048CFDAFKSA1 is commonly used in the following application fields: - Switch-mode power supplies - Motor control - Inverters - Industrial automation
Detailed and Complete Alternative Models
Some alternative models to the IPW65R048CFDAFKSA1 include: - IPW60R190C6 - IPW60R099C6 - IPW60R041C6
In conclusion, the IPW65R048CFDAFKSA1 is a high-voltage power MOSFET with excellent characteristics for various electronic applications, offering efficient power management and control capabilities.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPW65R048CFDAFKSA1 en soluciones técnicas
What is the maximum drain-source voltage of IPW65R048CFDAFKSA1?
- The maximum drain-source voltage of IPW65R048CFDAFKSA1 is 650V.
What is the typical on-state resistance of IPW65R048CFDAFKSA1?
- The typical on-state resistance of IPW65R048CFDAFKSA1 is 48mΩ.
What is the maximum continuous drain current of IPW65R048CFDAFKSA1?
- The maximum continuous drain current of IPW65R048CFDAFKSA1 is 120A.
What is the gate-source threshold voltage of IPW65R048CFDAFKSA1?
- The gate-source threshold voltage of IPW65R048CFDAFKSA1 is typically 2.5V.
What is the typical input capacitance of IPW65R048CFDAFKSA1?
- The typical input capacitance of IPW65R048CFDAFKSA1 is 3700pF.
What is the typical total gate charge of IPW65R048CFDAFKSA1?
- The typical total gate charge of IPW65R048CFDAFKSA1 is 90nC.
What are the recommended operating temperature range for IPW65R048CFDAFKSA1?
- The recommended operating temperature range for IPW65R048CFDAFKSA1 is -55°C to 150°C.
Is IPW65R048CFDAFKSA1 suitable for high-frequency switching applications?
- Yes, IPW65R048CFDAFKSA1 is suitable for high-frequency switching applications due to its low on-state resistance and fast switching characteristics.
Does IPW65R048CFDAFKSA1 have built-in protection features?
- IPW65R048CFDAFKSA1 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
What are some common applications for IPW65R048CFDAFKSA1?
- Common applications for IPW65R048CFDAFKSA1 include motor control, power supplies, inverters, and industrial automation systems.