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IPW65R190C7XKSA1
Product Overview
Category
The IPW65R190C7XKSA1 belongs to the category of power MOSFETs.
Use
It is used for high-voltage applications in power supplies, motor control, and other electronic devices.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The IPW65R190C7XKSA1 is available in a TO-247 package.
Essence
This MOSFET is essential for efficient power management and control in various electronic systems.
Packaging/Quantity
It is typically packaged in reels or tubes and is available in varying quantities based on customer requirements.
Specifications
- Drain-Source Voltage (VDS): 650V
- Continuous Drain Current (ID): 65A
- On-Resistance (RDS(on)): 190mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 70nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The IPW65R190C7XKSA1 has a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S).
Functional Features
- High voltage capability allows for use in demanding applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid response in switching applications.
Advantages and Disadvantages
Advantages
- High voltage capability suitable for diverse applications
- Low on-resistance for improved efficiency
- Fast switching speed for responsive performance
Disadvantages
- Higher cost compared to lower voltage MOSFETs
- May require additional circuitry for driving the gate at higher voltages
Working Principles
The IPW65R190C7XKSA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPW65R190C7XKSA1 is well-suited for use in: - Switched-mode power supplies - Motor drives - Inverters - Solar inverters - Uninterruptible power supplies (UPS)
Detailed and Complete Alternative Models
- IPW60R190C6 - Similar specifications with slightly lower on-resistance
- IPW65R190CFD - Higher current rating with comparable voltage and on-resistance
In conclusion, the IPW65R190C7XKSA1 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an ideal choice for various high-power applications. Its performance, characteristics, and application versatility make it a valuable component in modern electronic systems.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPW65R190C7XKSA1 en soluciones técnicas
Question: What is the maximum drain current of IPW65R190C7XKSA1?
Answer: The maximum drain current of IPW65R190C7XKSA1 is 65A.Question: What is the typical gate charge of IPW65R190C7XKSA1?
Answer: The typical gate charge of IPW65R190C7XKSA1 is 50nC.Question: What is the on-state resistance of IPW65R190C7XKSA1?
Answer: The on-state resistance of IPW65R190C7XKSA1 is 0.19 ohms.Question: What is the maximum power dissipation of IPW65R190C7XKSA1?
Answer: The maximum power dissipation of IPW65R190C7XKSA1 is 300W.Question: What is the operating temperature range of IPW65R190C7XKSA1?
Answer: The operating temperature range of IPW65R190C7XKSA1 is -55°C to 175°C.Question: Is IPW65R190C7XKSA1 suitable for high-frequency switching applications?
Answer: Yes, IPW65R190C7XKSA1 is suitable for high-frequency switching applications.Question: What is the gate-source voltage of IPW65R190C7XKSA1?
Answer: The gate-source voltage of IPW65R190C7XKSA1 is ±20V.Question: Does IPW65R190C7XKSA1 have built-in protection features?
Answer: Yes, IPW65R190C7XKSA1 has built-in overcurrent and overtemperature protection.Question: Can IPW65R190C7XKSA1 be used in automotive applications?
Answer: Yes, IPW65R190C7XKSA1 is suitable for automotive applications.Question: What are the typical applications of IPW65R190C7XKSA1?
Answer: Typical applications of IPW65R190C7XKSA1 include motor control, power supplies, and inverters.