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IRF6665TRPBF
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IRF6665TRPBF

Product Category: Power MOSFET

Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplification in power electronics applications - Characteristics: High voltage, high current capability, low on-resistance - Package: D2PAK (TO-263) - Essence: Efficient power management - Packaging/Quantity: Tape & Reel, 800 units per reel

Specifications: - Drain-Source Voltage (Vdss): 200V - Continuous Drain Current (Id): 24A - On-Resistance (Rds(on)): 0.045 ohms - Gate-Source Voltage (Vgs): ±20V - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration: - Pin 1 (G): Gate - Pin 2 (D): Drain - Pin 3 (S): Source

Functional Features: - Low on-resistance for minimal power dissipation - Fast switching speed for efficient power management - High input impedance for easy drive circuit interfacing

Advantages: - High voltage and current handling capability - Low on-resistance for reduced power losses - Suitable for high-frequency switching applications

Disadvantages: - Sensitivity to static electricity - Potential for thermal runaway if not properly heatsinked

Working Principles: The IRF6665TRPBF operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device. When a suitable voltage is applied to the gate terminal, it allows the flow of current between the drain and source terminals, enabling efficient power switching.

Detailed Application Field Plans: - Power supplies - Motor control - DC-DC converters - Inverters

Detailed and Complete Alternative Models: - Infineon IPP60R190C6 - STMicroelectronics STP260N4F6

This MOSFET is widely used in various power electronics applications due to its high voltage and current capabilities, low on-resistance, and fast switching speed. It is essential for efficient power management in modern electronic systems.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IRF6665TRPBF en soluciones técnicas

  1. What is the maximum drain-source voltage of IRF6665TRPBF?

    • The maximum drain-source voltage of IRF6665TRPBF is 30 volts.

  2. What is the continuous drain current rating of IRF6665TRPBF?

    • The continuous drain current rating of IRF6665TRPBF is 195 amperes.

  3. What is the typical on-resistance of IRF6665TRPBF?

    • The typical on-resistance of IRF6665TRPBF is 1.8 milliohms.

  4. Can IRF6665TRPBF be used in automotive applications?

    • Yes, IRF6665TRPBF is suitable for use in automotive applications.

  5. What is the operating temperature range of IRF6665TRPBF?

    • The operating temperature range of IRF6665TRPBF is -55°C to 175°C.

  6. Is IRF6665TRPBF RoHS compliant?

    • Yes, IRF6665TRPBF is RoHS compliant.

  7. What is the gate threshold voltage of IRF6665TRPBF?

    • The gate threshold voltage of IRF6665TRPBF typically ranges from 1.0V to 2.5V.

  8. Does IRF6665TRPBF require a heat sink for operation?

    • Depending on the application and power dissipation, a heat sink may be required for optimal performance of IRF6665TRPBF.

  9. What are the typical applications of IRF6665TRPBF?

    • IRF6665TRPBF is commonly used in power management, motor control, and battery protection applications.

  10. Is IRF6665TRPBF suitable for high-frequency switching applications?

    • Yes, IRF6665TRPBF is suitable for high-frequency switching due to its low on-resistance and fast switching characteristics.