MX29GL512EHXFI-10Q

Product Overview

Category

The MX29GL512EHXFI-10Q belongs to the category of flash memory chips.

Use

It is primarily used for data storage in electronic devices such as smartphones, tablets, digital cameras, and other portable devices.

Characteristics

• High storage capacity: The MX29GL512EHXFI-10Q offers a storage capacity of 512 megabits.
• Fast data transfer rate: It supports a high-speed data transfer rate, ensuring efficient performance.
• Reliable and durable: This flash memory chip is designed to withstand frequent read and write operations without compromising its reliability.
• Low power consumption: It operates on low power, making it suitable for battery-powered devices.
• Compact package: The MX29GL512EHXFI-10Q comes in a compact package, allowing for easy integration into various electronic devices.

Package and Quantity

The MX29GL512EHXFI-10Q is available in a surface-mount package. The exact quantity may vary depending on the manufacturer or supplier.

Specifications

• Manufacturer: MXIC (Macronix International Co., Ltd.)
• Model: MX29GL512EHXFI-10Q
• Memory Type: Flash memory
• Capacity: 512 megabits
• Interface: Parallel
• Operating Voltage: 2.7V - 3.6V
• Access Time: 100 nanoseconds
• Package Type: TSOP (Thin Small Outline Package)
• Package Dimensions: 12mm x 20mm

Pin Configuration

The MX29GL512EHXFI-10Q has a total of 48 pins. Here is the detailed pin configuration:

1. VCC (Power Supply)
2. A0-A18 (Address Inputs)
3. DQ0-DQ15 (Data Inputs/Outputs)
4. WE# (Write Enable)
5. CE# (Chip Enable)
6. OE# (Output Enable)
7. RP#/BYTE# (Reset/Byte Mode Select)
8. RY/BY# (Ready/Busy Output)
9. VSS (Ground)

Note: The remaining pins are not listed here for brevity.

Functional Features

• Erase and Program Operations: The MX29GL512EHXFI-10Q supports both sector erase and byte program operations, allowing for flexible data manipulation.
• Block Locking: It provides the option to lock specific memory blocks, preventing accidental modification or erasure of critical data.
• Error Correction Code (ECC): This flash memory chip incorporates ECC algorithms to ensure data integrity and reliability.
• High-Speed Read and Write: The MX29GL512EHXFI-10Q offers fast read and write speeds, enabling quick access to stored data.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Low power consumption
• Compact package size
• Reliable and durable

Disadvantages

• Limited compatibility with certain devices due to its parallel interface
• Relatively higher cost compared to other memory options

Working Principles

The MX29GL512EHXFI-10Q utilizes a floating-gate transistor technology to store data. It employs a combination of electrical charges to represent binary information (0s and 1s). During programming, electrons are trapped in the floating gate, altering the transistor's conductive properties. This change allows the chip to retain the programmed data even when the power is turned off.

Detailed Application Field Plans

The MX29GL512EHXFI-10Q can be used in various electronic devices that require non-volatile storage, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Automotive electronics - Industrial control systems

Alternative Models

Here are some alternative models that offer similar functionality to the MX29GL512EHXFI-10Q: - Samsung K9F5608U0D - Toshiba TC58NVG1S3HTA00 - Micron MT29F2G08ABAEAWP

These alternatives may vary in terms of capacity, interface, and other specifications. It is recommended to consult the manufacturer's datasheets for detailed information.

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