AT25040AN-10SU-2.7-T

Basic Information Overview

Category: Integrated Circuit (IC)

Use: Non-volatile Serial EEPROM (Electrically Erasable Programmable Read-Only Memory)

Characteristics: - Low-power CMOS technology - 4K (4096) bits of memory organized as 512 x 8 - 2-wire serial interface (I2C-compatible) - Wide operating voltage range: 1.8V to 5.5V - High-speed clock frequency: 400 kHz (maximum) - Self-timed write cycle with auto-erase - 32-byte page write mode for faster programming - More than 1 million erase/write cycles - Data retention: 100 years - Industrial temperature range: -40°C to +85°C

Package: 8-lead SOIC (Small Outline Integrated Circuit)

Essence: The AT25040AN-10SU-2.7-T is a non-volatile serial EEPROM IC that provides reliable and flexible data storage in various electronic devices.

Packaging/Quantity: The AT25040AN-10SU-2.7-T is typically sold in reels containing 2,000 units.

Specifications

• Memory Size: 4K bits
• Memory Organization: 512 x 8
• Interface: I2C-compatible (2-wire serial)
• Operating Voltage Range: 1.8V to 5.5V
• Clock Frequency: Up to 400 kHz
• Write Cycle Time: 5 ms (typical)
• Erase/Write Cycles: >1 million
• Data Retention: 100 years
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The AT25040AN-10SU-2.7-T features an 8-lead SOIC package with the following pin configuration:

1. VCC - Power Supply
2. SDA - Serial Data Input/Output
3. SCL - Serial Clock Input
4. WP - Write Protect (optional)
5. GND - Ground
6. NC - No Connection
7. NC - No Connection
8. VSS - Ground

Functional Features

• Non-volatile memory: The AT25040AN-10SU-2.7-T retains data even when power is removed.
• I2C-compatible interface: Allows for easy integration with microcontrollers and other devices.
• Self-timed write cycle: Simplifies programming by automatically erasing and writing data.
• Page write mode: Enables faster programming by allowing up to 32 bytes to be written at once.
• Wide operating voltage range: Provides flexibility in various electronic systems.
• High-speed clock frequency: Supports fast data transfer rates.

Advantages and Disadvantages

Advantages: - Reliable non-volatile storage - Low-power consumption - Easy integration with I2C-compatible devices - High-speed data transfer - Wide operating voltage range - Long data retention period

Disadvantages: - Limited memory size (4K bits) - Requires external components for operation - Sensitive to electrostatic discharge (ESD)

Working Principles

The AT25040AN-10SU-2.7-T utilizes a floating gate transistor technology to store data in its non-volatile memory cells. When data needs to be written, the device applies a high voltage to the memory cell, causing electrons to tunnel onto or off the floating gate. This process alters the threshold voltage of the transistor, representing either a logical "0" or "1". During read operations, the stored charge on the floating gate is measured to determine the stored data.

Detailed Application Field Plans

The AT25040AN-10SU-2.7-T is widely used in various electronic systems, including but not limited to: - Consumer electronics (e.g., TVs, set-top boxes, audio players) - Automotive electronics (e.g., infotainment systems, instrument clusters) - Industrial control systems - Medical devices - Smart meters - IoT (Internet of Things) devices

Detailed and Complete Alternative Models

Some alternative models to the AT25040AN-10SU-2.7-T include: - AT25080AN-10SU-2.7-T: 8K-bit EEPROM with similar specifications - AT25160AN-10SU-2.7-T: 16K-bit EEPROM with similar specifications - AT25320AN-10SU-2.7-T: 32K-bit EEPROM with similar specifications

These alternative models offer increased memory capacity while maintaining compatibility with the same interface and operating characteristics.

Word count: 516 words