AT28C256-20LM/883

Product Overview

Category

AT28C256-20LM/883 belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is removed.
• High storage capacity: 256 kilobits (32 kilobytes).
• Low power consumption: Suitable for battery-powered devices.
• Fast access time: 200 nanoseconds.
• Extended temperature range: Operates reliably in harsh environments.

Package

AT28C256-20LM/883 is available in a ceramic package, denoted by the suffix "LM/883".

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

AT28C256-20LM/883 is typically packaged in tubes or trays, with each containing a specific quantity of devices. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Capacity: 256 kilobits (32 kilobytes)
• Access Time: 200 nanoseconds
• Supply Voltage: 5V
• Operating Temperature Range: -55°C to +125°C
• Package Type: Ceramic

Detailed Pin Configuration

1. A0: Address Input
2. A1: Address Input
3. A2: Address Input
4. A3: Address Input
5. A4: Address Input
6. A5: Address Input
7. A6: Address Input
8. A7: Address Input
9. A8: Address Input
10. A9: Address Input
11. A10: Address Input
12. A11: Address Input
13. A12: Address Input
14. A13: Address Input
15. A14: Address Input
16. A15: Address Input
17. /OE: Output Enable
18. /CE: Chip Enable
19. /WE: Write Enable
20. VCC: Supply Voltage
21. D0: Data Input/Output
22. D1: Data Input/Output
23. D2: Data Input/Output
24. D3: Data Input/Output
25. D4: Data Input/Output
26. D5: Data Input/Output
27. D6: Data Input/Output
28. D7: Data Input/Output
29. NC: No Connection
30. GND: Ground

Functional Features

• Non-volatile storage: Retains data even without power.
• Random access: Allows reading and writing of specific memory locations.
• High-speed operation: Access time of 200 nanoseconds enables efficient data transfer.
• Low power consumption: Suitable for battery-powered devices.
• Extended temperature range: Operates reliably in extreme environments.

Advantages and Disadvantages

Advantages

• Non-volatile nature ensures data integrity.
• High storage capacity for various applications.
• Fast access time allows for quick data retrieval.
• Reliable operation in harsh conditions.
• Low power consumption prolongs battery life.

Disadvantages

• Limited storage capacity compared to newer memory technologies.
• Relatively slower access time compared to modern alternatives.
• Requires external circuitry for proper interfacing.

Working Principles

AT28C256-20LM/883 is based on Electrically Erasable Programmable Read-Only Memory (EEPROM) technology. It utilizes a grid of memory cells that can be individually programmed or erased electrically. The memory cells store information as electrical charges, which are retained even when power is removed. The device uses address inputs to select specific memory locations for reading or writing data. Control signals such as /OE (Output Enable), /CE (Chip Enable), and /WE (Write Enable) are used to control the memory operations.

Detailed Application Field Plans

AT28C256-20LM/883 finds applications in various electronic systems, including but not limited to: - Embedded systems - Automotive electronics - Industrial control systems - Medical devices - Communication equipment

Its non-volatile nature, high storage capacity, and extended temperature range make it suitable for use in environments where reliability and data integrity are crucial.

Detailed and Complete Alternative Models

1. AT28C256-15PU: Similar specifications with a slightly slower access time of 150 nanoseconds.
2. AT28C256-25PC: Similar specifications with a faster access time of 250 nanoseconds.
3. AT28C256-12PI: Similar specifications with a lower supply voltage of 3.3V.

These alternative models provide options with varying performance characteristics to suit different application requirements.

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