AT29C256-90TC-T

Product Overview

Category: Integrated Circuit (IC)

Use: The AT29C256-90TC-T is a high-performance electrically erasable programmable read-only memory (EEPROM) IC. It is commonly used for non-volatile storage in various electronic devices.

Characteristics: - High-speed operation - Low power consumption - Wide voltage range - Extended temperature range - Reliable data retention - Easy to program and erase

Package: The AT29C256-90TC-T is available in a 32-lead Thin Small Outline Package (TSOP). This package offers compactness and ease of integration into electronic circuits.

Essence: The essence of the AT29C256-90TC-T is its ability to store and retain digital information even when power is removed. This makes it ideal for applications that require non-volatile memory.

Packaging/Quantity: The AT29C256-90TC-T is typically packaged in reels or tubes, with a quantity of 250 units per reel/tube.

Specifications

• Memory Size: 256 kilobits (32 kilobytes)
• Operating Voltage: 2.7V to 5.5V
• Access Time: 90 nanoseconds
• Erase/Write Cycle Endurance: 10,000 cycles
• Data Retention: 20 years
• Organization: 32,768 words x 8 bits

Pin Configuration

The AT29C256-90TC-T has a total of 32 pins. The pin configuration is as follows:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. OE#
14. CE#
15. WE#
16. I/O0
17. I/O1
18. I/O2
19. I/O3
20. I/O4
21. I/O5
22. I/O6
23. I/O7
24. NC
25. GND
26. A8
27. A9
28. A11
29. A13
30. A15
31. NC
32. WP#

Functional Features

• High-speed read and write operations
• Byte-wise programmable and erasable
• Automatic erase-before-write capability
• Hardware and software data protection
• Low power consumption during standby mode
• Easy integration with microcontrollers and other digital systems

Advantages and Disadvantages

Advantages: - Fast access time allows for efficient data retrieval - Wide voltage range enables compatibility with various systems - Extended temperature range makes it suitable for harsh environments - Reliable data retention ensures long-term storage reliability - Easy programming and erasing process simplifies system development

Disadvantages: - Limited memory size compared to other EEPROM options - Erase/write cycle endurance may be insufficient for certain applications - Higher cost compared to traditional non-volatile memory technologies

Working Principles

The AT29C256-90TC-T utilizes a floating-gate transistor structure to store and retrieve digital information. The memory cells are organized in a matrix, with each cell capable of storing one bit of data. The programming and erasing of the memory cells are achieved through electrical signals applied to specific pins.

During programming, a high voltage is applied to the control pins, allowing electrons to tunnel onto the floating gate, altering its charge state. This change in charge determines the stored data value. Erasing is performed by applying a higher voltage, which removes the trapped electrons from the floating gate, resetting it to its initial state.

Detailed Application Field Plans

The AT29C256-90TC-T finds applications in various electronic systems that require non-volatile memory storage. Some of the common application fields include:

1. Embedded Systems: Used for firmware storage in microcontrollers and system-on-chip (SoC) devices.
2. Automotive Electronics: Provides reliable data storage for automotive control units, such as engine management systems and infotainment systems.
3. Industrial Control Systems: Enables program storage in industrial automation equipment, PLCs (Programmable Logic Controllers), and robotics.
4. Consumer Electronics: Used in devices like set-top boxes, gaming consoles, and smart home appliances for data storage and firmware updates.
5. Medical Devices: Provides non-volatile memory for medical equipment, such as patient monitoring systems and diagnostic devices.

Alternative Models

1. AT28C256-15PU: Similar EEPROM IC with a lower access time of 150 nanoseconds.
2. AT25SF041-SSHD-T: Serial Flash memory IC with a higher storage capacity of 4 meg