AT29LV512-12TI

Product Overview

Category

AT29LV512-12TI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: 512 kilobits (64 kilobytes).
• Low power consumption.
• Fast access time: 120 nanoseconds.
• Wide operating voltage range: 2.7V to 5.5V.

Package

AT29LV512-12TI is available in a compact Thin Small Outline Package (TSOP).

Essence

The essence of AT29LV512-12TI lies in its ability to provide reliable and non-volatile storage for electronic systems, ensuring data integrity even during power interruptions.

Packaging/Quantity

AT29LV512-12TI is typically packaged in reels or tubes, with quantities varying based on customer requirements.

Specifications

• Memory Type: Flash
• Organization: 64K x 8 bits
• Voltage Range: 2.7V to 5.5V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

1. VCC: Power supply voltage
2. A0-A15: Address inputs
3. CE: Chip enable
4. OE: Output enable
5. WE: Write enable
6. I/O0-I/O7: Data input/output lines
7. RY/BY: Ready/Busy output
8. RESET: Reset input

Functional Features

• Easy integration into existing systems.
• Efficient read and write operations.
• Reliable data retention.
• Low power consumption.
• Compatibility with a wide range of electronic devices.

Advantages

• Non-volatile memory ensures data integrity during power interruptions.
• High storage capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Wide operating voltage range provides flexibility in various applications.
• Low power consumption contributes to energy efficiency.

Disadvantages

• Limited erase/program cycle endurance compared to some other memory technologies.
• Relatively higher cost per bit compared to certain alternatives.
• Sensitive to electrostatic discharge (ESD) and requires proper handling precautions.

Working Principles

AT29LV512-12TI utilizes flash memory technology, which stores data by trapping electric charges within floating gate transistors. These charges determine the binary state of each memory cell, allowing for non-volatile data storage. The memory cells can be programmed or erased using specific electrical signals applied to the control pins.

Detailed Application Field Plans

AT29LV512-12TI finds application in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Its high storage capacity, fast access time, and non-volatile nature make it suitable for applications that require reliable data storage and retrieval.

Detailed and Complete Alternative Models

1. AT29LV010A-12JC: 1 Megabit Flash Memory, 120 ns Access Time, PLCC Package.
2. AT29C040A-12PC: 4 Megabit Flash Memory, 120 ns Access Time, PDIP Package.
3. AT45DB161E-SH-T: 16 Megabit DataFlash, 85 MHz Clock Frequency, SOIC Package.

These alternative models offer different storage capacities, package options, and features, providing flexibility to meet specific application requirements.

In conclusion, AT29LV512-12TI is a non-volatile memory device that offers high storage capacity, fast access time, and low power consumption. Its reliable data retention and compatibility with various electronic systems make it a valuable component in numerous applications. However, it is important to consider its limited erase/program cycle endurance and sensitivity to ESD during handling. Alternative models with different specifications and package options are available to cater to diverse application needs.