AT49BV001T-12JI

Product Overview

Category

AT49BV001T-12JI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems. It provides a reliable and long-term storage solution for various applications.

Characteristics

• Non-volatile: The AT49BV001T-12JI retains stored data even when power is removed.
• High capacity: This device has a storage capacity of 1 megabit (128 kilobytes).
• Fast access time: With a maximum access time of 120 nanoseconds, it ensures quick data retrieval.
• Low power consumption: The AT49BV001T-12JI operates at low power levels, making it suitable for battery-powered devices.
• Wide operating voltage range: It can function within a voltage range of 2.7V to 3.6V.

Package

The AT49BV001T-12JI is available in a standard JEDEC 32-pin PLCC (Plastic Leaded Chip Carrier) package.

Essence

This product is an essential component for data storage in electronic devices, providing reliable and non-volatile memory capabilities.

Packaging/Quantity

The AT49BV001T-12JI is typically packaged in reels or tubes, with a quantity of 1000 units per reel/tube.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Operating Voltage: 2.7V - 3.6V
• Access Time: 120 ns
• Interface: Parallel
• Package Type: PLCC-32

Detailed Pin Configuration

The AT49BV001T-12JI has a total of 32 pins. Here is the detailed pin configuration:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. OE#
14. CE#
15. WE#
16. I/O0
17. I/O1
18. I/O2
19. I/O3
20. I/O4
21. I/O5
22. I/O6
23. I/O7
24. RY/BY#
25. RESET#
26. NC
27. GND
28. A8
29. A9
30. A11
31. A13
32. A15

Functional Features

• Byte-wide access: The AT49BV001T-12JI allows individual byte-level access, providing flexibility in data manipulation.
• Erase and program operations: It supports both sector erase and byte program operations, enabling efficient memory management.
• Hardware and software protection: This device offers various protection mechanisms to prevent unauthorized access or accidental modification of stored data.
• High reliability: With built-in error correction techniques, the AT49BV001T-12JI ensures data integrity and reliability.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• Fast access time allows for quick data retrieval.
• Low power consumption makes it suitable for battery-powered devices.
• Wide operating voltage range provides compatibility with various systems.
• Hardware and software protection mechanisms enhance data security.

Disadvantages

• Limited storage capacity compared to higher-capacity memory devices.
• Parallel interface may require additional circuitry for interfacing with modern systems.

Working Principles

The AT49BV001T-12JI utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. The stored data is retained even when power is removed, thanks to the non-volatile nature of flash memory.

The device operates by sending specific commands through control pins to perform read, write, erase, or protection operations. These commands are decoded internally, allowing the user to interact with the memory effectively.

Detailed Application Field Plans

The AT49BV001T-12JI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Its reliable and non-volatile storage capabilities make it suitable for applications that require long-term data retention and quick access.

Detailed and Complete Alternative Models

• AT49BV002T-12JI: 2 megabit (256 kilobytes) capacity
• AT49BV004T-12JI: 4 megabit (512 kilobytes) capacity
• AT49BV008T-12JI: 8 megabit (1 megabyte) capacity

These alternative models offer higher storage capacities while maintaining similar characteristics and functionality as the AT49BV001T-