AT49BV002-12VI

Product Overview

Category

AT49BV002-12VI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: The AT49BV002-12VI has a storage capacity of 2 megabits.
• Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.
• Fast access time: The device offers quick access to stored data.

Package

The AT49BV002-12VI is available in a compact package that ensures easy integration into electronic circuits.

Essence

The essence of AT49BV002-12VI lies in its ability to provide reliable and non-volatile storage for digital information.

Packaging/Quantity

The device is typically packaged in trays or reels, with each containing a specific quantity of AT49BV002-12VI chips.

Specifications

• Memory Capacity: 2 Megabits (256 Kilobytes)
• Operating Voltage: 2.7V - 3.6V
• Access Time: 120 nanoseconds
• Interface: Parallel
• Organization: 256K x 8 bits
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The AT49BV002-12VI features the following pin configuration:

1. VCC: Power supply voltage
2. A0-A17: Address inputs
3. CE: Chip enable
4. OE: Output enable
5. WE: Write enable
6. I/O0-I/O7: Data input/output lines
7. RP/RB: Ready/Busy output
8. RESET: Reset input
9. NC: No connection
10. GND: Ground

Functional Features

• Random access: Allows for the retrieval of data from any memory location.
• Byte-wise programming: Enables individual bytes to be programmed independently.
• Sector erase capability: Supports erasing of specific sectors, allowing for efficient memory management.
• Data protection: Provides hardware and software methods to protect stored data from accidental modification.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High storage capacity allows for storing large amounts of information.
• Low power consumption makes it suitable for battery-powered devices.
• Fast access time enables quick retrieval of data.

Disadvantages

• Limited erase/program cycle endurance may restrict certain applications.
• Parallel interface may not be compatible with all systems.
• Relatively small memory capacity compared to other non-volatile memory options.

Working Principles

The AT49BV002-12VI utilizes flash memory technology to store and retrieve digital information. It employs a combination of floating-gate transistors and charge storage mechanisms to achieve non-volatile storage capabilities. The device uses an internal control circuitry to manage read, write, and erase operations.

Detailed Application Field Plans

The AT49BV002-12VI finds application in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49BV001-12VI: 1 Megabit non-volatile memory device with similar specifications.
2. AT49BV004-12VI: 4 Megabit non-volatile memory device with higher storage capacity.
3. AT49BV008-12VI: 8 Megabit non-volatile memory device with even higher storage capacity.

These alternative models offer different storage capacities to cater to varying requirements.

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