AT49BV002-90VI

Product Overview

Category

AT49BV002-90VI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High capacity: Offers a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: Provides a quick response time for reading and writing data.
• Low power consumption: Operates efficiently with minimal power requirements.

Package

AT49BV002-90VI is available in a compact and durable package, designed to protect the memory chip from external factors such as moisture and physical damage.

Essence

The essence of AT49BV002-90VI lies in its ability to provide reliable and long-term data storage in various electronic applications.

Packaging/Quantity

This product is typically packaged in trays or tubes, with each containing a specific quantity of memory chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash EEPROM
• Organization: 256K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 90 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The AT49BV002-90VI has a total of 32 pins, each serving a specific function. The pin configuration is as follows:

1. A0-A16: Address Inputs
2. DQ0-DQ7: Data Input/Output
3. CE: Chip Enable
4. OE: Output Enable
5. WE: Write Enable
6. BYTE: Byte/Word Organization Selection
7. VCC: Power Supply
8. GND: Ground

Functional Features

• Erase and Program Operations: The AT49BV002-90VI supports both sector erase and byte/word programming operations, allowing for flexible data manipulation.
• Automatic Write Timing: The device features an internal write timer that ensures accurate and reliable data programming.
• Data Protection: Built-in hardware and software protection mechanisms safeguard the stored data from accidental modification or corruption.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity suitable for various applications.
• Fast access time enables quick data retrieval.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles.
• Relatively higher cost compared to other types of memory.

Working Principles

AT49BV002-90VI utilizes flash EEPROM technology to store and retrieve data. It employs a combination of floating-gate transistors and electrically isolated gates to trap and release electrical charges, representing binary data.

The memory cells are organized into sectors, which can be individually erased or programmed. When data is written, the charge is trapped in the floating gate, and when erased, the charge is removed. This allows for non-volatile storage of information.

Detailed Application Field Plans

AT49BV002-90VI finds application in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Its high capacity, fast access time, and low power consumption make it suitable for storing firmware, configuration data, and other critical information in these fields.

Detailed and Complete Alternative Models

Some alternative models to AT49BV002-90VI include: - AT49BV001T: 1 Megabit Flash EEPROM - AT49BV004A: 4 Megabit Flash EEPROM - AT49BV008A: 8 Megabit Flash EEPROM

These models offer different storage capacities and may have variations in specifications, but they serve similar purposes as the AT49BV002-90VI.

In conclusion, the AT49BV002-90VI is a non-volatile memory device with high capacity, fast access time, and low power consumption. It finds application in various electronic systems and offers reliable data storage. Alternative models are available with varying capacities to suit different requirements.