AT49BV002NT-12VC

Product Overview

Category

AT49BV002NT-12VC belongs to the category of non-volatile memory devices.

Use

It is primarily used for data storage in various electronic devices such as microcontrollers, embedded systems, and consumer electronics.

Characteristics

• Non-volatile: The AT49BV002NT-12VC retains stored data even when power is removed.
• High capacity: It has a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: The device offers a fast access time of 120 nanoseconds.
• Low power consumption: It operates on low power, making it suitable for battery-powered devices.

Package

The AT49BV002NT-12VC is available in a standard 32-pin TSOP (Thin Small Outline Package) form factor.

Essence

This product is an essential component for storing program code, configuration settings, and other critical data in electronic devices.

Packaging/Quantity

The AT49BV002NT-12VC is typically packaged in reels or tubes, with each package containing a specific quantity of devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash EEPROM
• Capacity: 2 Megabits (256 Kilobytes)
• Access Time: 120 ns
• Supply Voltage: 3.0V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: 32-pin TSOP

Detailed Pin Configuration

The AT49BV002NT-12VC features a 32-pin TSOP package with the following pin configuration:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. CE#
18. OE#
19. WE#
20. RESET#
21. BYTE#
22. VCC
23. NC
24. GND
25. DQ0
26. DQ1
27. DQ2
28. DQ3
29. DQ4
30. DQ5
31. DQ6
32. DQ7

Functional Features

• Easy interface: The AT49BV002NT-12VC supports a standard parallel interface, making it compatible with various microcontrollers and systems.
• High-speed operation: With a fast access time of 120 ns, the device enables quick data retrieval and storage.
• Sector erase capability: It allows for selective erasure of specific memory sectors, providing flexibility in managing stored data.
• Write protection: The device features write protection mechanisms to prevent accidental modification or corruption of stored data.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity suitable for storing program code and critical data.
• Fast access time enables efficient data retrieval.
• Low power consumption makes it ideal for battery-powered devices.

Disadvantages

• Limited storage capacity compared to other modern non-volatile memory technologies.
• Relatively slower access time compared to some newer memory devices.
• May require additional circuitry for proper interfacing with certain systems.

Working Principles

The AT49BV002NT-12VC utilizes flash EEPROM technology for data storage. It consists of an array of floating-gate transistors that can be electrically programmed and erased. Data is stored by trapping charges in the floating gate, which alters the transistor's threshold voltage. This allows the device to retain data even when power is removed.

Detailed Application Field Plans

The AT49BV002NT-12VC finds applications in various fields, including: 1. Microcontrollers: Used for storing program code and configuration settings. 2. Embedded systems: Provides non-volatile storage for critical data and firmware. 3. Consumer electronics: Enables data storage in devices such as digital cameras, printers, and set-top boxes.

Detailed and Complete Alternative Models

1. AT49BV001T-12VC: 1 Megabit (128 Kilobytes) capacity variant of the same product line.
2. AT49BV004NT-12VC: 4 Megabit (512 Kilobytes) capacity variant with similar features.
3. AT49BV008AT-12VC: 8 Megabit (1 Megabyte) capacity variant offering higher storage capacity.

These alternative models provide options with varying storage capacities to suit different application requirements.

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