AT49BV002T-12TI

Product Overview

Category: Integrated Circuit (IC)

Use: The AT49BV002T-12TI is a high-performance Flash memory IC designed for use in various electronic devices. It provides non-volatile storage capabilities, allowing data to be stored even when power is removed.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Reliable and durable - Easy to integrate into electronic systems

Package: The AT49BV002T-12TI is available in a compact and industry-standard Thin Small Outline Package (TSOP). This package ensures easy handling and compatibility with existing circuit board designs.

Essence: The essence of the AT49BV002T-12TI lies in its ability to provide reliable and high-speed non-volatile storage for electronic devices, enabling them to retain important data even during power cycles or system shutdowns.

Packaging/Quantity: The AT49BV002T-12TI is typically packaged in reels, containing a specified quantity of ICs per reel. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash
• Memory Size: 2 Megabits (256 Kilobytes)
• Operating Voltage: 2.7V - 3.6V
• Access Time: 120 ns
• Interface: Parallel
• Organization: 32K x 8 bits
• Erase/Program Suspend & Resume Support: Yes
• Data Retention: 20 years
• Endurance: 10,000 erase/write cycles

Detailed Pin Configuration

The AT49BV002T-12TI features a 32-pin Thin Small Outline Package (TSOP) with the following pin configuration:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. CE#
18. OE#
19. WE#
20. BYTE#
21. VCC
22. DQ0
23. DQ1
24. DQ2
25. DQ3
26. DQ4
27. DQ5
28. DQ6
29. DQ7
30. RY/BY#
31. NC
32. GND

Functional Features

• High-speed read and write operations
• Low power consumption during standby mode
• Sector erase capability for efficient memory management
• Built-in hardware and software data protection mechanisms
• Easy integration with existing parallel interface systems
• Erase and program suspend/resume support for flexible operation

Advantages and Disadvantages

Advantages: - High-speed operation allows for quick data access - Low power consumption prolongs battery life in portable devices - Large storage capacity accommodates a wide range of applications - Reliable and durable, ensuring data integrity over extended periods - Easy integration into electronic systems due to industry-standard package and interface

Disadvantages: - Limited endurance compared to some other non-volatile memory technologies - Higher cost per bit compared to certain alternative memory solutions

Working Principles

The AT49BV002T-12TI utilizes Flash memory technology to store data. It employs a combination of floating-gate transistors and charge storage elements to retain information even when power is removed. The memory cells are organized in a matrix, allowing for efficient read and write operations.

Detailed Application Field Plans

The AT49BV002T-12TI finds applications in various electronic devices, including but not limited to: - Microcontrollers - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems

Its high-speed operation, reliability, and large storage capacity make it suitable for applications that require non-volatile data storage.

Detailed and Complete Alternative Models

• AT49BV001T-12TC: 1 Megabit Flash memory IC with similar specifications
• AT49BV004T-12TC: 4 Megabit Flash memory IC with similar specifications
• AT49BV008T-12TC: 8 Megabit Flash memory IC with similar specifications

These alternative models offer different storage capacities while maintaining compatibility with the AT49BV002T-12TI in terms of pin configuration and functionality.

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