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AT49BV040-12VI
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AT49BV040-12VI

Product Overview

Category

AT49BV040-12VI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

  • Non-volatile: The AT49BV040-12VI retains stored data even when power is removed.
  • High capacity: This device has a storage capacity of 4 megabits (512 kilobytes).
  • Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.
  • Fast access time: The AT49BV040-12VI offers quick access to stored data.

Package

The AT49BV040-12VI is available in a standard 32-pin plastic package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT49BV040-12VI is typically packaged in reels or tubes, with a quantity of 1000 units per package.

Specifications

  • Memory Type: Flash
  • Organization: 512K x 8 bits
  • Voltage Range: 2.7V - 3.6V
  • Access Time: 120 ns
  • Operating Temperature Range: -40°C to +85°C
  • Erase/Write Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

  1. A16
  2. A14
  3. A12
  4. A7
  5. A6
  6. A5
  7. A4
  8. A3
  9. A2
  10. A1
  11. A0
  12. VCC
  13. DQ0
  14. DQ1
  15. DQ2
  16. DQ3
  17. DQ4
  18. DQ5
  19. DQ6
  20. DQ7
  21. WE#
  22. CE#
  23. OE#
  24. BYTE#
  25. VSS
  26. RP#
  27. WP#
  28. RESET#
  29. NC
  30. A15
  31. A13
  32. A8

Functional Features

  • Byte-wide and word-wide operations
  • Sector erase capability
  • Hardware and software data protection
  • Automatic sleep mode
  • Fast programming time

Advantages and Disadvantages

Advantages

  • Non-volatile storage ensures data retention even during power loss.
  • High storage capacity for various applications.
  • Low power consumption extends battery life.
  • Quick access time enhances system performance.

Disadvantages

  • Limited erase/write cycle endurance may affect long-term reliability.
  • Higher cost compared to volatile memory options.
  • Requires additional circuitry for proper integration into electronic systems.

Working Principles

The AT49BV040-12VI utilizes flash memory technology, which stores data in floating gate transistors. When data is written, electrons are trapped in the floating gate, altering the transistor's behavior. This alteration allows the device to retain the stored data even when power is removed. The data can be read by applying appropriate voltage levels to the pins of the device.

Detailed Application Field Plans

The AT49BV040-12VI finds application in various electronic systems, including: 1. Embedded systems 2. Consumer electronics 3. Automotive electronics 4. Industrial control systems 5. Communication devices

Alternative Models

  1. AT49BV040B-12VI
  2. AT49BV040T-12VI
  3. AT49BV040A-12VI
  4. AT49BV040D-12VI

These alternative models offer similar functionality and specifications to the AT49BV040-12VI, providing options for different system requirements.

In conclusion, the AT49BV040-12VI is a non-volatile memory device with high capacity, low power consumption, and fast access time. It finds application in various electronic systems and offers advantages such as data retention, performance enhancement, and flexibility. However, it also has limitations in terms of endurance and cost. Alternative models provide options for different needs within the same product category.

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de AT49BV040-12VI en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of AT49BV040-12VI in technical solutions:

  1. Q: What is the AT49BV040-12VI? A: The AT49BV040-12VI is a 4-megabit (512K x 8) CMOS flash memory device.

  2. Q: What is the voltage range for operating the AT49BV040-12VI? A: The AT49BV040-12VI operates within a voltage range of 2.7V to 3.6V.

  3. Q: What is the access time of the AT49BV040-12VI? A: The AT49BV040-12VI has an access time of 120 nanoseconds (ns).

  4. Q: Can the AT49BV040-12VI be used as a direct replacement for other flash memory devices? A: Yes, the AT49BV040-12VI is designed to be pin-compatible with other industry-standard flash memory devices.

  5. Q: What is the endurance rating of the AT49BV040-12VI? A: The AT49BV040-12VI has an endurance rating of at least 100,000 program/erase cycles.

  6. Q: Does the AT49BV040-12VI support sector erase operations? A: Yes, the AT49BV040-12VI supports sector erase operations, allowing for efficient erasure of specific memory sectors.

  7. Q: What is the typical power consumption of the AT49BV040-12VI during read operations? A: The typical power consumption of the AT49BV040-12VI during read operations is 20 mA.

  8. Q: Can the AT49BV040-12VI be operated in a wide temperature range? A: Yes, the AT49BV040-12VI is designed to operate within a temperature range of -40°C to +85°C.

  9. Q: Does the AT49BV040-12VI support hardware data protection features? A: Yes, the AT49BV040-12VI supports hardware data protection features such as program/erase lockout during power transitions.

  10. Q: What are some typical applications for the AT49BV040-12VI? A: The AT49BV040-12VI is commonly used in various applications including embedded systems, consumer electronics, automotive systems, and industrial equipment.

Please note that these answers are general and may vary depending on the specific requirements and use cases of your technical solution.