AT49BV040B-TU

Product Overview

Category

AT49BV040B-TU belongs to the category of Flash Memory.

Use

It is primarily used for data storage and retrieval in electronic devices.

Characteristics

• Non-volatile memory
• High-speed read and write operations
• Low power consumption
• Wide operating voltage range

Package

AT49BV040B-TU is available in a compact package, suitable for surface mount technology (SMT) applications.

Essence

The essence of AT49BV040B-TU lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

This product is typically packaged in reels or trays, with a quantity of 2500 units per reel/tray.

Specifications

• Memory Size: 4 Megabits (512 Kbytes)
• Organization: 512K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time:
  • Read: 70 ns
  • Page Mode Read: 25 ns
  • Byte/Page Program: 10 μs
• Erase Time:
  • Chip Erase: 10 ms
  • Sector Erase: 500 ms
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. VCC - Power Supply
10. A8 - Address Input
11. A9 - Address Input
12. A10 - Address Input
13. A11 - Address Input
14. A12 - Address Input
15. A13 - Address Input
16. A14 - Address Input
17. A15 - Address Input
18. /OE - Output Enable
19. /WE - Write Enable
20. /CE - Chip Enable
21. NC - No Connection
22. DQ0 - Data Input/Output
23. DQ1 - Data Input/Output
24. DQ2 - Data Input/Output
25. DQ3 - Data Input/Output
26. DQ4 - Data Input/Output
27. DQ5 - Data Input/Output
28. DQ6 - Data Input/Output
29. DQ7 - Data Input/Output
30. VSS - Ground

Functional Features

• High-speed read and write operations allow for quick data access.
• Low power consumption ensures efficient energy usage.
• Wide operating voltage range provides flexibility in various electronic devices.
• Page mode read allows for faster sequential data retrieval.
• Byte/page program enables efficient data writing.

Advantages and Disadvantages

Advantages

• Fast read and write operations
• Low power consumption
• Wide operating voltage range
• Compact package suitable for SMT applications

Disadvantages

• Relatively slower erase time compared to some alternative models
• Limited memory size (4 Megabits)

Working Principles

AT49BV040B-TU utilizes flash memory technology, which is based on the principle of storing charge in floating gate transistors. The presence or absence of charge determines the binary state of each memory cell, allowing for data storage. Reading and writing operations involve applying appropriate voltages to the memory cells, enabling data retrieval or modification.

Detailed Application Field Plans

AT49BV040B-TU finds application in various electronic devices, including but not limited to: - Mobile phones - Digital cameras - Portable media players - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. AT49BV040B-TU-2C
2. AT49BV040B-TU-3C
3. AT49BV040B-TU-4C
4. AT49BV040B-TU-5C
5. AT49BV040B-TU-6C

These alternative models offer similar functionality and characteristics, providing options for different requirements and specifications.

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