AT49BV163DT-70TU-T

Product Overview

Category

AT49BV163DT-70TU-T belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The AT49BV163DT-70TU-T retains stored data even when power is removed.
• High capacity: This device has a storage capacity of 16 megabits (2 megabytes).
• Fast access time: It offers a fast access time of 70 nanoseconds.
• Low power consumption: The AT49BV163DT-70TU-T operates on low power, making it suitable for battery-powered devices.

Package

The AT49BV163DT-70TU-T is available in a small form factor Thin Small Outline Package (TSOP).

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

The AT49BV163DT-70TU-T is typically packaged in reels or tubes, with a quantity of 250 units per reel/tube.

Specifications

• Memory Type: Flash
• Organization: 2M x 8
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns
• Erase/Program Suspend/Erase Suspend: Yes
• Package Type: TSOP

Detailed Pin Configuration

The AT49BV163DT-70TU-T has the following pin configuration:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. CE# - Chip Enable Input
18. OE# - Output Enable Input
19. WE# - Write Enable Input
20. BYTE# - Byte/Word Organization Input
21. VCC - Power Supply
22. DQ0 - Data Input/Output
23. DQ1 - Data Input/Output
24. DQ2 - Data Input/Output
25. DQ3 - Data Input/Output
26. DQ4 - Data Input/Output
27. DQ5 - Data Input/Output
28. DQ6 - Data Input/Output
29. DQ7 - Data Input/Output
30. RY/BY# - Ready/Busy Output
31. RP# - Reset/Deep Power-Down Input
32. GND - Ground

Functional Features

The AT49BV163DT-70TU-T offers the following functional features:

• High-speed read and write operations
• Sector erase capability
• Erase and program suspend/resume functions
• Low power consumption during standby and active modes
• Automatic sleep mode to reduce power consumption when not in use
• Hardware reset function for system initialization

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even without power
• High storage capacity for various applications
• Fast access time allows for quick data retrieval
• Low power consumption extends battery life in portable devices

Disadvantages

• Limited endurance compared to other memory technologies
• Relatively higher cost per bit compared to some alternatives

Working Principles

The AT49BV163DT-70TU-T is based on flash memory technology. It utilizes a grid of floating-gate transistors to store data. When data needs to be written, the charge is trapped in the floating gate, altering the transistor's behavior. Reading the stored data involves sensing the transistor's state and interpreting it as either a "0" or "1" bit.

Detailed Application Field Plans

The AT49BV163DT-70TU-T finds applications in various electronic systems, including but not limited to:

1. Embedded systems
2. Consumer electronics
3. Automotive electronics
4. Industrial control systems
5. Communication devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the AT49BV163DT-70TU-T include:

1. AT45DB161E-SHN-T: 16 megabit DataFlash memory with similar specifications.
2. S25FL116K0XMFI011: 16 megabit SPI Flash memory with comparable features.