AT49BV802AT-70CI-T

Product Overview

Category

The AT49BV802AT-70CI-T belongs to the category of Flash Memory ICs.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile memory: The AT49BV802AT-70CI-T retains stored data even when power is turned off.
• High capacity: This flash memory IC has a storage capacity of 8 megabits (1 megabyte).
• Fast access time: It offers a fast access time of 70 nanoseconds, enabling quick data retrieval.
• Low power consumption: The AT49BV802AT-70CI-T operates at low power levels, making it suitable for battery-powered devices.

Package

The AT49BV802AT-70CI-T is available in a compact plastic package that ensures protection against environmental factors such as moisture and dust. It follows the industry-standard TSOP (Thin Small Outline Package) footprint.

Essence

The essence of the AT49BV802AT-70CI-T lies in its ability to provide reliable and high-capacity non-volatile storage for various electronic devices.

Packaging/Quantity

This flash memory IC is typically packaged in reels or tubes, with each reel or tube containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 8 Megabits (1 Megabyte)
• Access Time: 70 Nanoseconds
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Organization: 512K x 16
• Erase/Program Suspend & Resume Support: Yes
• Data Retention: 20 years

Detailed Pin Configuration

The AT49BV802AT-70CI-T follows a standard pin configuration for parallel flash memory ICs. The detailed pinout is as follows:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. BYTE# - Byte/Word Selection Input
18. CE# - Chip Enable Input
19. OE# - Output Enable Input
20. WE# - Write Enable Input
21. RESET# - Reset Input
22. VCC - Power Supply
23. DQ0 - Data Input/Output
24. DQ1 - Data Input/Output
25. DQ2 - Data Input/Output
26. DQ3 - Data Input/Output
27. DQ4 - Data Input/Output
28. DQ5 - Data Input/Output
29. DQ6 - Data Input/Output
30. DQ7 - Data Input/Output
31. DQ8 - Data Input/Output
32. DQ9 - Data Input/Output
33. DQ10 - Data Input/Output
34. DQ11 - Data Input/Output
35. DQ12 - Data Input/Output
36. DQ13 - Data Input/Output
37. DQ14 - Data Input/Output
38. DQ15 - Data Input/Output
39. VSS - Ground

Functional Features

• Erase and Program Operations: The AT49BV802AT-70CI-T supports both sector erase and byte/word programming operations, allowing flexible data manipulation.
• Suspend & Resume Support: This flash memory IC enables the suspension of ongoing erase or program operations, allowing other tasks to be performed simultaneously.
• Automatic Page Write: It supports automatic page write operations, enhancing efficiency during programming.

Advantages and Disadvantages

Advantages

• High storage capacity for data-intensive applications.
• Fast access time ensures quick data retrieval.
• Low power consumption extends battery life in portable devices.
• Non-volatile memory retains data even without power.

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles before degradation.
• Relatively higher cost compared to other types of memory.

Working Principles

The AT49BV802AT-70CI-T utilizes a floating-gate transistor structure to store data. It employs a combination of electrical charges to represent binary information (0s and 1s). The stored