AT49F001-55PC

Product Overview

Category

AT49F001-55PC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: Can store up to 1 megabit (128 kilobytes) of data.
• Fast access time: Provides quick read and write operations.
• Low power consumption: Operates efficiently with minimal power requirements.

Package

AT49F001-55PC is available in a 32-pin plastic dual in-line package (PDIP).

Essence

The essence of AT49F001-55PC lies in its ability to provide reliable and high-capacity non-volatile memory storage for various electronic applications.

Packaging/Quantity

AT49F001-55PC is typically packaged in tubes or trays, with each tube or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: Flash EEPROM
• Memory Size: 1 Megabit (128 Kilobytes)
• Organization: 128K x 8 bits
• Supply Voltage: 5V
• Access Time: 55 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The AT49F001-55PC has a total of 32 pins, which are assigned specific functions as follows:

1. A16 - Address Input
2. A15 - Address Input
3. A12 - Address Input
4. A7 - Address Input
5. A6 - Address Input
6. A5 - Address Input
7. A4 - Address Input
8. A3 - Address Input
9. A2 - Address Input
10. A1 - Address Input
11. A0 - Address Input
12. VCC - Power Supply
13. OE# - Output Enable
14. CE# - Chip Enable
15. WE# - Write Enable
16. I/O0 - Data Input/Output
17. I/O1 - Data Input/Output
18. I/O2 - Data Input/Output
19. I/O3 - Data Input/Output
20. I/O4 - Data Input/Output
21. I/O5 - Data Input/Output
22. I/O6 - Data Input/Output
23. I/O7 - Data Input/Output
24. RY/BY# - Ready/Busy Output
25. RESET# - Reset Input
26. NC - No Connection
27. GND - Ground
28. A14 - Address Input
29. A13 - Address Input
30. A8 - Address Input
31. A9 - Address Input
32. A11 - Address Input

Functional Features

• High-speed read and write operations
• Sector erase capability for efficient memory management
• Hardware and software data protection mechanisms
• Low power consumption during standby mode
• Automatic sleep mode to conserve energy
• Easy integration with various microcontrollers and systems

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even in the absence of power.
• High storage capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval and modification of stored information.
• Low power consumption makes it suitable for battery-powered devices.
• Sector erase capability facilitates efficient memory organization.

Disadvantages

• Limited endurance with a maximum of 10,000 erase/program cycles.
• Relatively higher cost compared to other types of memory.
• Requires specific programming and erasing procedures.

Working Principles

AT49F001-55PC utilizes flash EEPROM technology to store data. It consists of a grid of memory cells, each capable of holding one bit of information. These cells are organized into sectors, which can be individually erased or programmed. The device operates by applying appropriate voltage levels to the address, control, and data pins, enabling read, write, and erase operations.

Detailed Application Field Plans

AT49F001-55PC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to AT49F001-55PC include: - AT49BV001T: 1 Megabit Flash EEPROM with top boot block architecture - AT45DB011D: 1 Megabit DataFlash memory with dual-interface (SPI and I2C) - AM29F010B: 1 Megabit CMOS 5.0 Volt-only Flash memory

These alternative models provide