AT49F001NT-12VI

Product Overview

Category

AT49F001NT-12VI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The stored data remains intact even when power is removed.
• High capacity: The AT49F001NT-12VI has a storage capacity of 1 megabit (128 kilobytes).
• Fast access time: It operates at a maximum access time of 120 nanoseconds.
• Low power consumption: It requires minimal power to operate efficiently.

Package

The AT49F001NT-12VI is available in a standard 32-pin plastic DIP (Dual In-line Package) format.

Essence

This memory device is essential for preserving critical data in various electronic applications.

Packaging/Quantity

The AT49F001NT-12VI is typically packaged in reels or tubes, with each containing a specific quantity of devices. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 4.5V - 5.5V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Write Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The AT49F001NT-12VI features a 32-pin configuration. The pinout details are as follows:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. WE#
14. OE#
15. CE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. VCC
27. GND
28. RP#
29. RY/BY#
30. RESET#
31. A8
32. A9

Functional Features

• Easy integration: The AT49F001NT-12VI can be easily integrated into existing electronic systems.
• High-speed operation: It offers fast read and write operations, enabling efficient data access.
• Versatile interface: The device supports a standard parallel interface for seamless communication with the host system.
• Reliable data retention: The non-volatile nature of the memory ensures long-term data retention without the need for power.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data integrity even during power loss.
• High storage capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Low power consumption contributes to energy efficiency.

Disadvantages

• Limited erase/write cycle endurance may require careful management in certain applications.
• The 32-pin package may not be suitable for space-constrained designs.

Working Principles

The AT49F001NT-12VI utilizes flash EEPROM technology to store and retrieve data. It employs a combination of floating-gate transistors and control circuitry to enable non-volatile memory functionality. When data is written, charges are trapped in the floating gate, altering the transistor's behavior. These charges can be erased by applying specific voltage levels, allowing new data to be written.

Detailed Application Field Plans

The AT49F001NT-12VI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. AT49F002NT-12VI: 2 megabit (256 kilobytes) flash EEPROM with similar specifications.
2. AT49F004NT-12VI: 4 megabit (512 kilobytes) flash EEPROM with similar specifications.
3. AT49F008NT-12VI: 8 megabit (1 megabyte) flash EEPROM with similar specifications.

These alternative models offer increased storage capacity while maintaining compatibility with the AT49F001NT-12VI in terms of pin configuration and functionality.

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