AT49F001NT-90VI

Product Overview

Category

AT49F001NT-90VI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The AT49F001NT-90VI has a storage capacity of 1 megabit (128 kilobytes).
• Fast access time: It offers a fast access time of 90 nanoseconds.
• Low power consumption: The device operates at low power, making it suitable for battery-powered applications.

Package

The AT49F001NT-90VI is available in a 32-pin TSOP (Thin Small Outline Package) form factor.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT49F001NT-90VI is typically packaged in reels or tubes, with a quantity of 250 units per reel/tube.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 4.5V - 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 10 years
• Erase/Write Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The AT49F001NT-90VI has a total of 32 pins. Here is the detailed pin configuration:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. A8
14. A9
15. A11
16. A10
17. OE#
18. CE#
19. WE#
20. I/O0
21. I/O1
22. I/O2
23. I/O3
24. I/O4
25. I/O5
26. I/O6
27. I/O7
28. RY/BY#
29. RESET#
30. NC
31. GND
32. VCC

Functional Features

• Easy interface: The AT49F001NT-90VI supports a standard parallel interface, making it compatible with various microcontrollers and systems.
• High-speed operation: With a fast access time of 90 nanoseconds, this device enables quick data retrieval and storage.
• Sector erase capability: The memory can be erased in sectors, allowing for efficient management of data.
• Write protection: The device features a write protection mechanism to prevent accidental modification of stored data.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity allows for storing large amounts of data.
• Fast access time enables quick data retrieval.
• Low power consumption makes it suitable for battery-powered applications.

Disadvantages

• Limited erase/write cycle endurance compared to some other non-volatile memory technologies.
• Relatively higher cost per bit compared to certain alternative memory options.

Working Principles

The AT49F001NT-90VI utilizes flash EEPROM technology for data storage. It consists of a grid of memory cells that can be electrically programmed and erased. When data is written, an electrical charge is applied to the memory cell, altering its state. To erase data, the charge is removed from the cell. This process allows for non-volatile storage of data.

Detailed Application Field Plans

The AT49F001NT-90VI is widely used in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive applications - Industrial control systems

Detailed and Complete Alternative Models

1. AT49BV001NT-90VI: Similar to AT49F001NT-90VI, but with burst mode access capability.
2. AT49LV001NT-90VI: Low-voltage variant of AT49F001NT-90VI, operating at 2.7V - 3.6V.
3. AT49F002NT-90VI: Double the capacity of AT49F001NT-90VI, offering 2 megabits (256 kilobytes) of storage.

These alternative models provide similar functionality with slight variations in features and specifications.

In conclusion, the AT49F001NT-90VI is a non-volatile memory device primarily used for data storage in electronic systems. With its high capacity, fast access time, and low power consumption, it offers reliable and efficient storage solutions. While it has limitations in terms of erase/write cycle endurance and cost per