AT49F001T-70PC

Product Overview

Category

AT49F001T-70PC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: Can store a large amount of data.
• Fast access time: Allows for quick retrieval of stored information.
• Reliable: Provides stable and consistent performance over time.

Package

AT49F001T-70PC is available in a standard 32-pin plastic dual in-line package (PDIP).

Essence

The essence of AT49F001T-70PC lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each reel or tube containing a specific quantity of AT49F001T-70PC chips.

Specifications

• Memory Type: Flash
• Memory Size: 1 Megabit
• Organization: 128K x 8
• Access Time: 70 nanoseconds
• Supply Voltage: 5V
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. A16
2. A15
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. WE#
14. OE#
15. CE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. VCC
27. GND
28. NC
29. NC
30. NC
31. NC
32. NC

Functional Features

• Easy integration: Can be easily integrated into various electronic systems.
• High-speed operation: Provides fast read and write operations.
• Low power consumption: Consumes minimal power during operation.
• Sector erase capability: Allows for selective erasure of specific memory sectors.

Advantages

• Non-volatile nature ensures data retention even in the absence of power.
• High storage capacity enables the storage of large amounts of data.
• Fast access time allows for quick retrieval of information.
• Reliable performance ensures consistent operation over time.

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles.
• Higher cost compared to other types of memory technologies.
• Susceptible to data corruption in case of power surges or electromagnetic interference.

Working Principles

AT49F001T-70PC utilizes flash memory technology, which is based on the principle of trapping electric charges within floating gate transistors. These trapped charges represent binary data (0s and 1s) and can be electrically programmed or erased as needed.

During programming, a high voltage is applied to the control gate, allowing electrons to tunnel through the insulating layer and become trapped in the floating gate. This process sets the memory cell to a programmed state.

Erasing is achieved by applying a higher voltage to the entire memory block, causing the trapped charges to tunnel out of the floating gate and return the memory cell to an erased state.

Detailed Application Field Plans

AT49F001T-70PC finds applications in various electronic devices and systems, including: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication equipment

Detailed and Complete Alternative Models

1. AT49F002NT-55VI
2. AT49F010-70TI
3. AT49F040-70TU
4. AT49F080-70TU
5. AT49F1610-70TU

These alternative models offer similar functionality and characteristics to AT49F001T-70PC, but with varying memory sizes and access times.

In conclusion, AT49F001T-70PC is a non-volatile memory device that provides reliable and high-capacity storage for electronic systems. Its fast access time, easy integration, and sector erase capability make it suitable for a wide range of applications. However, it has limitations in terms of endurance and cost compared to other memory technologies.