AT49F002AN-55PI

Product Overview

Category

AT49F002AN-55PI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: 2 megabits (256 kilobytes).
• Fast access time: 55 nanoseconds.
• Low power consumption.
• Easy to integrate into various electronic systems.

Package

AT49F002AN-55PI is available in a 32-pin plastic DIP (Dual In-line Package).

Essence

The essence of AT49F002AN-55PI lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.

Packaging/Quantity

AT49F002AN-55PI is typically packaged in tubes or trays, with quantities varying based on customer requirements.

Specifications

• Memory Type: Flash EEPROM
• Organization: 256K x 8 bits
• Supply Voltage: 4.5V - 5.5V
• Access Time: 55 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Write Cycle Endurance: 10,000 cycles
• Data Retention: 20 years

Detailed Pin Configuration

1. A16
2. A15
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. OE#
14. CE#
15. WE#
16. I/O0
17. I/O1
18. I/O2
19. I/O3
20. I/O4
21. I/O5
22. I/O6
23. I/O7
24. GND
25. NC
26. NC
27. NC
28. VCC
29. A14
30. A13
31. A8
32. A9

Functional Features

• Easy integration: Compatible with a wide range of microcontrollers and electronic systems.
• High-speed data transfer: Allows for efficient read and write operations.
• Non-volatile storage: Retains data even during power loss or system shutdown.
• Low power consumption: Ideal for battery-powered devices.
• Erase and write capability: Enables data modification as needed.

Advantages and Disadvantages

Advantages

• High storage capacity for its size.
• Fast access time allows for quick data retrieval.
• Reliable non-volatile memory ensures data integrity.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited erase/write cycle endurance compared to some other memory technologies.
• Relatively higher cost per bit compared to certain alternatives.

Working Principles

AT49F002AN-55PI utilizes flash EEPROM technology, which combines the benefits of both EPROM and EEPROM. It stores data using floating gate transistors that can be electrically programmed and erased. The memory cells are organized into a grid-like structure, with each cell representing a bit of data. When data needs to be written or erased, specific voltage levels are applied to the appropriate pins, modifying the charge on the floating gate and thereby altering the stored data.

Detailed Application Field Plans

AT49F002AN-55PI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49F002NT-55PI: Similar to AT49F002AN-55PI, but with extended temperature range (-40°C to +125°C).
2. AT49F002NT-70PI: Similar to AT49F002NT-55PI, but with a faster access time of 70 ns.
3. AT49F002BT-55PI: Similar to AT49F002AN-55PI, but with a smaller package size (PLCC-32).

These alternative models offer similar functionality and can be chosen based on specific project requirements.

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