AT49F002N-12TI

Product Overview

Category

AT49F002N-12TI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The AT49F002N-12TI retains stored data even when power is removed.
• High capacity: This device has a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: It operates at a speed of 120 nanoseconds, allowing for quick data retrieval.
• Low power consumption: The AT49F002N-12TI is designed to minimize power usage.
• Reliable: It offers high endurance and data retention capabilities.

Package

The AT49F002N-12TI is available in a standard 32-pin plastic DIP (Dual In-line Package).

Essence

This product is an essential component for many electronic devices, enabling them to store and retrieve data reliably.

Packaging/Quantity

The AT49F002N-12TI is typically packaged in reels or tubes, with quantities varying based on customer requirements.

Specifications

• Memory Type: Flash
• Organization: 256K x 8 bits
• Supply Voltage: 5V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: 32-pin DIP

Detailed Pin Configuration

1. A16
2. A15
3. A14
4. A13
5. A12
6. A7
7. A6
8. A5
9. A4
10. A3
11. A2
12. A1
13. A0
14. VCC
15. OE#
16. CE#
17. WE#
18. I/O0
19. I/O1
20. I/O2
21. I/O3
22. I/O4
23. I/O5
24. I/O6
25. I/O7
26. RY/BY#
27. RESET#
28. NC
29. GND
30. A8
31. A9
32. A11

Functional Features

• Easy integration: The AT49F002N-12TI can be easily integrated into various electronic systems.
• High-speed operation: It offers fast read and write operations, enhancing overall system performance.
• Versatile interface: This device supports a standard parallel interface, making it compatible with a wide range of systems.
• Sector erase capability: It allows for selective erasure of specific memory sectors, providing flexibility in data management.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity meets the requirements of many applications.
• Fast access time enables quick data retrieval.
• Low power consumption prolongs battery life in portable devices.
• Reliable endurance and data retention characteristics ensure long-term usability.

Disadvantages

• Limited rewrite cycles: Flash memory has a finite number of erase/write cycles before degradation may occur.
• Higher cost compared to other types of memory technologies.
• Susceptible to data corruption from electrical noise or power fluctuations.

Working Principles

The AT49F002N-12TI utilizes flash memory technology, which stores data by trapping electric charges within floating gate transistors. These trapped charges represent binary information (0s and 1s). When reading data, the stored charges are detected and interpreted as digital values. During write or erase operations, high voltages are applied to modify the charge levels within the floating gates, allowing for data programming or erasure.

Detailed Application Field Plans

The AT49F002N-12TI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49F002N-10SI: Similar to the AT49F002N-12TI, but with a faster access time of 100 ns.
2. AT49F002N-15JI: Offers a slower access time of 150 ns, suitable for applications with less stringent performance requirements.
3. AT49F002N-20PI: Provides a higher storage capacity of 4 megabits (512 kilobytes) for applications requiring more memory.

These alternative models offer different specifications to cater to specific application needs while maintaining compatibility with the AT49F002N series.

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