AT49F002N-12VI

Product Overview

Category

AT49F002N-12VI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: The AT49F002N-12VI has a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: It has a maximum access time of 120 nanoseconds.
• Low power consumption: Designed to operate with low power requirements.
• Wide operating voltage range: Can operate within a voltage range of 4.5V to 5.5V.

Package

The AT49F002N-12VI is available in a 32-pin plastic DIP (Dual In-line Package) or TSOP (Thin Small Outline Package).

Essence

The essence of AT49F002N-12VI lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT49F002N-12VI is typically packaged in tubes or reels, with quantities varying based on customer requirements.

Specifications

• Memory Type: Flash EEPROM
• Organization: 256K x 8 bits
• Supply Voltage: 4.5V - 5.5V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The AT49F002N-12VI has a total of 32 pins. Here is the detailed pin configuration:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. WE#
14. OE#
15. CE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. VCC
27. GND
28. RP#
29. RESET#
30. NC
31. NC
32. NC

Functional Features

• Easy to interface with microcontrollers and other electronic systems.
• Supports both read and write operations.
• Provides sector erase and chip erase functions.
• Offers protection against accidental data modification through hardware and software methods.
• Low power consumption during standby mode.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even in the absence of power.
• High storage capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Wide operating voltage range provides flexibility in various electronic systems.
• Low power consumption helps conserve energy.

Disadvantages

• Limited endurance due to erase/program cycle limitations.
• Relatively higher cost compared to other types of memory devices.
• Susceptible to physical damage if mishandled or exposed to extreme conditions.

Working Principles

The AT49F002N-12VI utilizes flash EEPROM technology to store and retrieve data. It consists of a grid of memory cells that can be electrically programmed and erased. The memory cells are organized into an array, with each cell capable of storing one bit of information. Data is written by applying appropriate voltages to specific pins, and it can be erased by subjecting the memory cells to high voltages. The stored data can be accessed by providing the appropriate address and control signals.

Detailed Application Field Plans

The AT49F002N-12VI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

Here are some alternative models that offer similar functionality to the AT49F002N-12VI: - AT49BV002T - AM29F002B - SST39SF020A

These models provide comparable storage capacity, access time, and operating characteristics, making them suitable alternatives for different design requirements.

In conclusion, the AT49F002N-12VI is a non-volatile memory device with a high storage capacity and fast access time. It offers reliable data storage for various electronic systems and finds applications in diverse fields. While it has advantages such as non-volatility and low power consumption, it also has limitations in terms of endurance and cost. Understanding its specifications, pin configuration, functional features, and alternative models helps in utilizing this memory device effectively in different applications.