SST39VF512-70-4C-NHE

Product Overview

Category

The SST39VF512-70-4C-NHE belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The SST39VF512-70-4C-NHE retains stored data even when power is removed.
• High capacity: With a capacity of 512 megabits (64 megabytes), it offers ample storage space.
• Fast access time: The device provides quick access to stored data with a speed of 70 nanoseconds.
• Low power consumption: It operates efficiently, consuming minimal power during read and write operations.

Package

The SST39VF512-70-4C-NHE comes in a compact package that ensures easy integration into electronic circuits. It is available in a surface-mount TSOP (Thin Small Outline Package) form factor.

Essence

The essence of this product lies in its ability to reliably store and retrieve data, making it an essential component in modern electronic devices.

Packaging/Quantity

The SST39VF512-70-4C-NHE is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package varies but is commonly around 250 units.

Specifications

• Memory Type: Flash
• Capacity: 512 Megabits (64 Megabytes)
• Access Time: 70 Nanoseconds
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: TSOP

Detailed Pin Configuration

The SST39VF512-70-4C-NHE has a total of 48 pins. Here is a detailed pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. DQ0
26. DQ1
27. DQ2
28. DQ3
29. DQ4
30. DQ5
31. DQ6
32. DQ7
33. WE#
34. CE#
35. OE#
36. RESET#
37. BYTE#
38. RY/BY#
39. NC
40. VSS
41. VSS
42. VSS
43. VSS
44. VSS
45. VSS
46. VSS
47. VSS
48. VSS

Functional Features

• High-speed data transfer: The SST39VF512-70-4C-NHE offers fast read and write operations, enabling efficient data transfer.
• Sector erase capability: It allows for selective erasure of specific memory sectors, enhancing flexibility in data management.
• Write protection: The device supports hardware and software write protection mechanisms to prevent accidental data modification.
• Reliable data retention: The SST39VF512-70-4C-NHE ensures long-term data integrity with its robust storage capabilities.

Advantages and Disadvantages

Advantages

• High capacity for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Low power consumption for energy-efficient operation.
• Sector erase capability allows for efficient data management.

Disadvantages

• Limited endurance: Flash memory has a finite number of write cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

The SST39VF512-70-4C-NHE utilizes flash memory technology, which is based on the principle of storing data in floating-gate transistors. These transistors can retain their charge even when power is removed, allowing for non-volatile storage. The device uses an interface to communicate with the host system and performs read, write, and erase operations as instructed.

Detailed Application Field Plans

The SST39VF512-70-4C-NHE finds applications in various fields, including:

1. Computers and laptops: Used for storing operating systems, firmware, and user data.
2. Smartphones and tablets: Provides storage for apps, media files, and user data.
3. Automotive electronics: Utilized in infotainment systems, instrument clusters, and engine control units.
4. Industrial automation: Used in programmable logic controllers (PLCs