SST39VF800A-70-4C-M1QE-T

Product Overview

Category

The SST39VF800A-70-4C-M1QE-T belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and other digital devices.

Characteristics

• High-speed read and write operations
• Large storage capacity
• Low power consumption
• Durable and reliable
• Compact package size

Package

The SST39VF800A-70-4C-M1QE-T is available in a small form factor package, making it suitable for space-constrained applications.

Essence

The essence of this product lies in its ability to store and retrieve data quickly and efficiently, providing a reliable solution for data storage needs.

Packaging/Quantity

The SST39VF800A-70-4C-M1QE-T is typically packaged in trays or reels, with a quantity of 250 units per reel.

Specifications

• Operating Voltage: 2.7V - 3.6V
• Capacity: 8 Megabits (1 Megabyte)
• Access Time: 70 nanoseconds
• Temperature Range: -40°C to +85°C
• Interface: Parallel
• Organization: 512K x 16 bits
• Erase/Program Cycles: 100,000 minimum

Detailed Pin Configuration

The SST39VF800A-70-4C-M1QE-T has the following pin configuration:

1. VCC - Power supply voltage
2. A0-A18 - Address inputs
3. DQ0-DQ15 - Data inputs/outputs
4. WE# - Write enable
5. CE# - Chip enable
6. OE# - Output enable
7. RP# - Reset/Protection
8. WP# - Write protect
9. RY/BY# - Ready/Busy status output

Functional Features

• High-speed data transfer
• Easy integration into existing systems
• Sector erase and byte programming capabilities
• Built-in protection mechanisms to prevent accidental data loss
• Reliable operation in harsh environments

Advantages and Disadvantages

Advantages

• Fast read and write operations
• Large storage capacity
• Low power consumption
• Compact package size
• Durable and reliable

Disadvantages

• Limited erase/program cycles
• Requires external circuitry for proper operation

Working Principles

The SST39VF800A-70-4C-M1QE-T utilizes a floating gate transistor technology to store data. It uses electrical charges to represent binary information, with the presence or absence of charge determining the stored data.

During programming, an electric field is applied to the floating gate, allowing electrons to tunnel through a thin oxide layer and become trapped. This trapped charge alters the transistor's behavior, effectively storing the desired data.

During reading, the transistor's behavior is analyzed to determine the stored data. The presence or absence of charge on the floating gate affects the transistor's conductivity, allowing the stored data to be retrieved.

Detailed Application Field Plans

The SST39VF800A-70-4C-M1QE-T finds applications in various fields, including:

1. Computer systems
2. Mobile devices
3. Automotive electronics
4. Industrial control systems
5. Consumer electronics

Its high-speed performance, large storage capacity, and reliability make it suitable for a wide range of applications that require data storage.

Detailed and Complete Alternative Models

1. AT45DB081D - 8 Megabit DataFlash Memory
2. MX25L8006E - 8 Megabit Serial Flash Memory
3. W25Q80BV - 8 Megabit Serial Flash Memory
4. M25P80 - 8 Megabit Serial Flash Memory

These alternative models offer similar specifications and functionality to the SST39VF800A-70-4C-M1QE-T, providing options for different application requirements.

In conclusion, the SST39VF800A-70-4C-M1QE-T is a flash memory device that offers high-speed data storage and retrieval capabilities. With its compact package size, low power consumption, and durability, it is suitable for various electronic devices. However, it has limitations in terms of erase/program cycles and requires external circuitry for proper operation. Nonetheless, its working principles and detailed application field plans demonstrate its versatility and usefulness in different industries. Alternative models provide additional options for similar functionality and specifications.