Micron Technology Inc.
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MT29E6T08ETHBBM5-3ES:B TR

MT29E6T08ETHBBM5-3ES:B TR

Product Overview

Category

MT29E6T08ETHBBM5-3ES:B TR belongs to the category of electronic memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and tablets.

Characteristics

  • High-speed data transfer capabilities
  • Large storage capacity
  • Compact size
  • Low power consumption

Package

MT29E6T08ETHBBM5-3ES:B TR is typically packaged in a small integrated circuit (IC) chip.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

MT29E6T08ETHBBM5-3ES:B TR is commonly available in tape and reel packaging, with a quantity of 1000 units per reel.

Specifications

  • Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
  • Capacity: 8 gigabits (1 gigabyte)
  • Speed: DDR4-2400 (2400 megatransfers per second)
  • Voltage: 1.2 volts
  • Organization: 512M x 16 bits
  • Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of MT29E6T08ETHBBM5-3ES:B TR is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. VSS
  19. VDD
  20. BA0
  21. BA1
  22. A0
  23. A1
  24. A2
  25. A3
  26. A4
  27. A5
  28. A6
  29. A7
  30. A8
  31. A9
  32. A10
  33. A11
  34. A12
  35. A13
  36. A14
  37. A15
  38. A16
  39. A17
  40. A18
  41. A19
  42. A20
  43. A21
  44. A22
  45. A23
  46. A24
  47. A25
  48. A26
  49. A27
  50. A28
  51. A29
  52. A30
  53. A31
  54. VSS
  55. VDD
  56. CK
  57. CKE
  58. CS#
  59. WE#
  60. CAS#
  61. RAS#
  62. DM0
  63. DM1
  64. VSS

Functional Features

  • High-speed data transfer rate for efficient data processing
  • Low latency for quick access to stored information
  • Error correction capabilities for data integrity
  • Auto-refresh function to maintain data stability
  • Power-saving modes to reduce energy consumption

Advantages and Disadvantages

Advantages

  • Fast data transfer speed enhances overall system performance
  • Large storage capacity allows for extensive data storage
  • Compact size enables integration into various electronic devices
  • Low power consumption prolongs battery life in portable devices

Disadvantages

  • Relatively higher cost compared to other memory technologies
  • Limited durability compared to non-volatile memory options
  • Susceptible to data loss in case of power failure

Working Principles

MT29E6T08ETHBBM5-3ES:B TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores data in a matrix of capacitors, which are organized into rows and columns. The stored data is accessed by sending specific commands and addresses to the memory controller, which activates the corresponding row and column to read or write data.

Detailed Application Field Plans

MT29E6T08ETHBBM5-3ES:B TR finds applications in various electronic devices, including: 1. Personal computers 2. Laptops 3. Servers 4. Smartphones 5. Tablets 6. Gaming consoles 7. Networking equipment 8. Automotive electronics 9. Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to MT29E6T08ETHBBM5-3ES:B TR include: 1. MT29E6T16ETHBBM5-3ES:B TR - 16 gigabit capacity variant 2. MT29E6T04ETHBBM5-3ES:B TR

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de MT29E6T08ETHBBM5-3ES:B TR en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of MT29E6T08ETHBBM5-3ES:B TR in technical solutions:

  1. Question: What is the purpose of MT29E6T08ETHBBM5-3ES:B TR in technical solutions?
    Answer: MT29E6T08ETHBBM5-3ES:B TR is a memory module used for data storage and retrieval in various technical solutions.

  2. Question: What is the capacity of MT29E6T08ETHBBM5-3ES:B TR?
    Answer: MT29E6T08ETHBBM5-3ES:B TR has a capacity of [insert capacity here] (e.g., 8GB, 16GB, etc.).

  3. Question: What type of interface does MT29E6T08ETHBBM5-3ES:B TR use?
    Answer: MT29E6T08ETHBBM5-3ES:B TR uses a [insert interface type here] interface (e.g., DDR4, DDR3, etc.).

  4. Question: Can MT29E6T08ETHBBM5-3ES:B TR be used in different technical solutions?
    Answer: Yes, MT29E6T08ETHBBM5-3ES:B TR can be used in various technical solutions that require memory modules with compatible specifications.

  5. Question: What is the operating voltage range of MT29E6T08ETHBBM5-3ES:B TR?
    Answer: The operating voltage range of MT29E6T08ETHBBM5-3ES:B TR is typically [insert voltage range here] (e.g., 1.2V to 1.35V).

  6. Question: Is MT29E6T08ETHBBM5-3ES:B TR compatible with both desktop and laptop systems?
    Answer: Yes, MT29E6T08ETHBBM5-3ES:B TR is compatible with both desktop and laptop systems as long as they support the same interface type.

  7. Question: Can MT29E6T08ETHBBM5-3ES:B TR be used for gaming applications?
    Answer: Yes, MT29E6T08ETHBBM5-3ES:B TR can be used for gaming applications that require additional memory capacity and faster data access.

  8. Question: What is the maximum frequency supported by MT29E6T08ETHBBM5-3ES:B TR?
    Answer: The maximum frequency supported by MT29E6T08ETHBBM5-3ES:B TR is typically [insert frequency here] (e.g., 2400MHz, 3200MHz, etc.).

  9. Question: Does MT29E6T08ETHBBM5-3ES:B TR have any built-in error correction capabilities?
    Answer: Yes, MT29E6T08ETHBBM5-3ES:B TR may have built-in error correction capabilities depending on the specific model and configuration.

  10. Question: Is MT29E6T08ETHBBM5-3ES:B TR compatible with different operating systems?
    Answer: Yes, MT29E6T08ETHBBM5-3ES:B TR is compatible with various operating systems as long as the system supports the same interface and voltage requirements.

Please note that the answers provided above are general and may vary based on the specific technical specifications of MT29E6T08ETHBBM5-3ES:B TR.