MT29F128G08CBECBL95B3WC1

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile
  • High capacity
  • Reliable
• Package: BGA (Ball Grid Array)
• Essence: Flash memory chip
• Packaging/Quantity: Single chip

Specifications

• Capacity: 128GB
• Interface: NAND
• Voltage: 3.3V
• Speed: Up to 200MB/s (Read), up to 100MB/s (Write)
• Endurance: 10,000 Program/Erase cycles
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The MT29F128G08CBECBL95B3WC1 has a total of 48 pins. The pin configuration is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | VCCQ | Power supply voltage for I/O | | 3 | GND | Ground | | 4 | RE# | Read Enable | | 5 | WE# | Write Enable | | 6-13 | A0-A7 | Address Inputs | | 14-21 | A8-A15 | Address Inputs | | 22-29 | A16-A23 | Address Inputs | | 30-37 | A24-A31 | Address Inputs | | 38-45 | DQ0-DQ7 | Data Inputs/Outputs | | 46 | CLE | Command Latch Enable | | 47 | ALE | Address Latch Enable | | 48 | CE# | Chip Enable |

Functional Features

• High-speed data transfer
• Error correction capability
• Wear leveling for extended lifespan
• Block management for efficient storage utilization
• Bad block management for improved reliability

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rates
• Non-volatile memory (retains data even when power is off)
• Reliable and durable
• Suitable for various applications

Disadvantages

• Limited program/erase cycles
• Higher cost compared to traditional hard drives

Working Principles

The MT29F128G08CBECBL95B3WC1 utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the voltage levels applied to it. When reading data, the stored voltages are converted back into digital information. Writing data involves applying specific voltage patterns to program the memory cells.

Detailed Application Field Plans

The MT29F128G08CBECBL95B3WC1 is widely used in various electronic devices and systems, including: - Solid-state drives (SSDs) - USB flash drives - Memory cards - Embedded systems - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

• MT29F128G08CBECBL85B3WC1
• MT29F128G08CBECBL75B3WC1
• MT29F128G08CBECBL65B3WC1
• MT29F128G08CBECBL55B3WC1

These alternative models have similar specifications and functionality but may differ in endurance, temperature range, or other minor features.

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