MT29F128G08CBECBL95B3WC1-R

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile
  • High capacity (128GB)
  • Reliable and durable
• Package: BGA (Ball Grid Array)
• Essence: Flash memory chip
• Packaging/Quantity: Single unit

Specifications

• Model: MT29F128G08CBECBL95B3WC1-R
• Capacity: 128GB
• Interface: NAND Flash
• Voltage: 3.3V
• Speed: Up to 200MB/s (read), up to 150MB/s (write)
• Operating Temperature: -40°C to +85°C
• Endurance: 100,000 program/erase cycles
• Data Retention: Up to 10 years

Detailed Pin Configuration

The MT29F128G08CBECBL95B3WC1-R has a total of 48 pins. The pin configuration is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | VCCQ | Power supply voltage for I/O | | 3 | GND | Ground | | 4 | RE# | Read enable input | | 5 | WE# | Write enable input | | 6 | CLE | Command latch enable input | | 7 | ALE | Address latch enable input | | 8-15 | A0-A7 | Address inputs | | 16-23 | A8-A15 | Address inputs | | 24-31 | A16-A23 | Address inputs | | 32-39 | A24-A31 | Address inputs | | 40-47 | D0-D7 | Data inputs/outputs |

Functional Features

• High-speed data transfer
• Error correction and detection mechanisms
• Wear-leveling algorithms for extended lifespan
• Block management for efficient storage utilization
• Bad block management for improved reliability

Advantages

• Large storage capacity
• Fast read and write speeds
• Low power consumption
• Compact form factor
• High endurance and data retention

Disadvantages

• Relatively high cost compared to other memory options
• Limited write endurance compared to some other memory technologies

Working Principles

The MT29F128G08CBECBL95B3WC1-R is based on NAND flash memory technology. It stores data in a series of memory cells organized into blocks. Each cell can store multiple bits of information, allowing for high-density storage. The memory cells are accessed using an address bus, and data is transferred through a data bus. The device utilizes various algorithms and mechanisms to ensure reliable data storage and retrieval.

Detailed Application Field Plans

The MT29F128G08CBECBL95B3WC1-R is widely used in various applications that require high-capacity and non-volatile data storage. Some common application fields include: - Solid-state drives (SSDs) - Embedded systems - Consumer electronics (e.g., smartphones, tablets) - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

• MT29F128G08CBECBL95B3WC1
• MT29F128G08CBECBL95B3WC2
• MT29F128G08CBECBL95B3WC3
• MT29F128G08CBECBL95B3WC4

These alternative models offer similar specifications and functionality but may differ in package type or other minor features.

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