MT29F128G08CECGBJ4-37R:G TR

Product Overview

Category

The MT29F128G08CECGBJ4-37R:G TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F128G08CECGBJ4-37R:G TR offers a storage capacity of 128 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance, ensuring data integrity and durability.
• Low power consumption: The MT29F128G08CECGBJ4-37R:G TR is energy-efficient, consuming minimal power during operation.
• Compact package: It comes in a compact form factor, making it suitable for integration into small-sized electronic devices.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental friendliness.

Package and Quantity

The MT29F128G08CECGBJ4-37R:G TR is typically packaged in a surface-mount technology (SMT) package. The exact package dimensions and specifications can be obtained from the manufacturer's datasheet. The quantity of units per package may vary depending on the supplier or customer requirements.

Specifications

• Storage Capacity: 128 GB
• Interface: NAND
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Erase/Program Cycles: Up to 10,000 cycles

Pin Configuration

The detailed pin configuration of the MT29F128G08CECGBJ4-37R:G TR can be found in the manufacturer's datasheet. It typically includes pins for power supply, data input/output, control signals, and other necessary connections.

Functional Features

• Page-level access: The NAND flash memory allows for random access at the page level, enabling efficient read and write operations.
• Error correction: Built-in error correction mechanisms ensure data integrity by detecting and correcting errors during read and write operations.
• Wear leveling: The product incorporates wear-leveling algorithms to evenly distribute program/erase cycles across memory blocks, extending the overall lifespan of the device.
• Bad block management: The NAND flash memory includes a mechanism to identify and manage bad blocks, ensuring reliable operation even with defective memory cells.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate facilitates quick access to stored information.
• Reliable performance ensures data integrity and durability.
• Low power consumption contributes to energy efficiency.
• Compact package allows for integration into small-sized electronic devices.
• RoHS compliance ensures environmental friendliness.

Disadvantages

• Limited erase/program cycles compared to other non-volatile memory technologies.
• Relatively higher cost per gigabyte compared to traditional hard disk drives.

Working Principles

The MT29F128G08CECGBJ4-37R:G TR utilizes NAND flash memory technology. It stores data in memory cells organized in a grid-like structure. Each cell can store multiple bits of information using different voltage levels. When reading data, the controller applies appropriate voltages to the memory cells and measures the resulting electrical currents to determine the stored values. During write operations, the controller applies specific voltage levels to program the memory cells with new data.

Detailed Application Field Plans

The MT29F128G08CECGBJ4-37R:G TR finds applications in various electronic devices that require high-capacity and reliable data storage. Some potential application fields include: - Smartphones and tablets - Digital cameras and camcorders - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems - Embedded systems

Alternative Models

For users seeking alternative NAND flash memory options, several models can be considered as alternatives to the MT29F128G08CECGBJ4-37R:G TR. These include: - Model A: [Specifications and details] - Model B: [Specifications and details] - Model C: [Specifications and details] - Model D: [Specifications and details]

Please refer to the respective datasheets and product documentation for detailed information on these alternative models.

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