Micron Technology Inc.
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MT29F128G08CFABBWP-12IT:B

MT29F128G08CFABBWP-12IT:B

Product Overview

Category

MT29F128G08CFABBWP-12IT:B belongs to the category of NAND flash memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity: The MT29F128G08CFABBWP-12IT:B offers a storage capacity of 128 gigabytes (GB), allowing for ample data storage.
  • Fast data transfer rate: It provides high-speed data transfer, enabling quick access to stored information.
  • Reliable performance: The NAND flash memory ensures reliable performance with low power consumption.
  • Durable design: It is designed to withstand shock, vibration, and extreme temperature conditions.
  • Compact package: The MT29F128G08CFABBWP-12IT:B comes in a compact package, making it suitable for integration into small-sized electronic devices.

Packaging/Quantity

The MT29F128G08CFABBWP-12IT:B is typically packaged in a surface-mount technology (SMT) package. The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

  • Part Number: MT29F128G08CFABBWP-12IT:B
  • Memory Type: NAND Flash
  • Storage Capacity: 128 GB
  • Interface: Serial Peripheral Interface (SPI)
  • Operating Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: Ball Grid Array (BGA)
  • Package Dimensions: 14mm x 18mm

Detailed Pin Configuration

The MT29F128G08CFABBWP-12IT:B has a specific pin configuration that facilitates its integration into electronic devices. The detailed pin configuration is as follows:

  1. VCC: Power supply voltage
  2. GND: Ground reference
  3. CE: Chip enable
  4. CLE: Command latch enable
  5. ALE: Address latch enable
  6. RE: Read enable
  7. WE: Write enable
  8. R/B: Ready/busy status
  9. DQ0-DQ7: Data input/output lines
  10. WP: Write protect
  11. RST: Reset

Functional Features

  • High-speed data transfer: The MT29F128G08CFABBWP-12IT:B offers fast read and write speeds, allowing for efficient data access.
  • Error correction: It incorporates error correction techniques to ensure data integrity and reliability.
  • Wear leveling: The NAND flash memory employs wear leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the device.
  • Block management: It includes block management functions to optimize data storage and improve overall performance.
  • Bad block management: The MT29F128G08CFABBWP-12IT:B has mechanisms in place to handle and manage bad blocks effectively.

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast data transfer rate
  • Low power consumption
  • Compact design
  • Durable and reliable performance

Disadvantages

  • Relatively higher cost compared to other types of memory
  • Limited endurance (number of program/erase cycles)

Working Principles

The MT29F128G08CFABBWP-12IT:B utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate within each memory cell. When a voltage is applied, the trapped electrons can be read or erased, allowing for data storage and retrieval.

Detailed Application Field Plans

The MT29F128G08CFABBWP-12IT:B finds applications in various electronic devices that require high-capacity data storage. Some of the potential application fields include:

  1. Smartphones and tablets: The NAND flash memory provides ample storage for apps, media files, and user data.
  2. Digital cameras: It enables storing a large number of high-resolution photos and videos.
  3. Solid-state drives (SSDs): The MT29F128G08CFABBWP-12IT:B can be used as primary storage in SSDs, offering fast boot times and data access.

Detailed and Complete Alternative Models

  • MT29F128G08CBABA
  • MT29F128G08CECBBH6
  • MT29F128G08CMCABH7
  • MT29F128G08CUABA

These alternative models offer similar specifications and functionalities to the MT29F128G08CFABBWP-12IT:B and can be considered as alternatives based on specific requirements.

In conclusion, the MT29F128G08CFABBWP-12IT:B is a NAND flash memory device that provides high storage capacity, fast data transfer rate, and reliable performance. It finds applications in various electronic devices and offers advantages

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de MT29F128G08CFABBWP-12IT:B en soluciones técnicas

  1. Question: What is the capacity of the MT29F128G08CFABBWP-12IT:B?
    Answer: The MT29F128G08CFABBWP-12IT:B has a capacity of 128 gigabits (16 gigabytes).

  2. Question: What is the operating voltage range for this memory device?
    Answer: The operating voltage range for the MT29F128G08CFABBWP-12IT:B is typically between 2.7V and 3.6V.

  3. Question: What is the interface used by this memory device?
    Answer: The MT29F128G08CFABBWP-12IT:B uses a standard NAND flash interface.

  4. Question: What is the maximum data transfer rate supported by this memory device?
    Answer: The MT29F128G08CFABBWP-12IT:B supports a maximum data transfer rate of up to 200 megabytes per second.

  5. Question: Can this memory device be used in industrial applications?
    Answer: Yes, the MT29F128G08CFABBWP-12IT:B is designed for industrial-grade applications and can withstand harsh operating conditions.

  6. Question: Does this memory device support wear-leveling algorithms?
    Answer: Yes, the MT29F128G08CFABBWP-12IT:B supports built-in wear-leveling algorithms to ensure even distribution of write/erase cycles across the memory cells.

  7. Question: Is this memory device compatible with existing NAND flash controllers?
    Answer: Yes, the MT29F128G08CFABBWP-12IT:B is designed to be compatible with standard NAND flash controllers, making it easy to integrate into existing systems.

  8. Question: What is the typical endurance rating of this memory device?
    Answer: The MT29F128G08CFABBWP-12IT:B has a typical endurance rating of 3,000 program/erase cycles per block.

  9. Question: Can this memory device operate in temperatures outside the standard range?
    Answer: Yes, the MT29F128G08CFABBWP-12IT:B is rated for extended temperature operation, with a range of -40°C to +85°C.

  10. Question: Does this memory device support hardware encryption?
    Answer: No, the MT29F128G08CFABBWP-12IT:B does not have built-in hardware encryption capabilities.