Micron Technology Inc.
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MT29F128G08EBEBBB95A3WC1-M

MT29F128G08EBEBBB95A3WC1-M

Basic Information Overview

  • Category: Memory Device
  • Use: Data storage and retrieval
  • Characteristics:
    • Non-volatile
    • High capacity
    • Fast read/write speeds
  • Package: Integrated Circuit (IC)
  • Essence: Stores digital information in a compact and durable format
  • Packaging/Quantity: Typically sold individually or in bulk quantities

Specifications

  • Model: MT29F128G08EBEBBB95A3WC1-M
  • Capacity: 128 gigabits (16 gigabytes)
  • Interface: NAND Flash
  • Voltage: 3.3V
  • Speed: Up to 200 megabytes per second (read), up to 100 megabytes per second (write)
  • Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The MT29F128G08EBEBBB95A3WC1-M has a standard pin configuration for NAND Flash memory devices. The specific pin assignments are as follows:

  1. VCC: Power supply voltage
  2. GND: Ground
  3. CE: Chip Enable
  4. CLE: Command Latch Enable
  5. ALE: Address Latch Enable
  6. RE: Read Enable
  7. WE: Write Enable
  8. R/B: Ready/Busy status
  9. DQ0-DQ7: Data Input/Output lines
  10. WP: Write Protect
  11. RST: Reset

Functional Features

  • High-speed data transfer
  • Reliable data retention
  • Error correction capabilities
  • Wear-leveling algorithms for extended lifespan
  • Block management for efficient storage utilization
  • Bad block management for improved reliability

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read/write speeds - Non-volatile memory - Compact form factor - High reliability and durability

Disadvantages: - Higher cost compared to other memory technologies - Limited write endurance - Susceptible to physical damage if mishandled

Working Principles

The MT29F128G08EBEBBB95A3WC1-M utilizes NAND Flash technology to store digital information. It consists of a grid of memory cells, each capable of storing multiple bits of data. When writing data, electrical charges are applied to the memory cells, altering their states to represent the desired information. Reading data involves detecting the stored charge levels in the memory cells.

Detailed Application Field Plans

The MT29F128G08EBEBBB95A3WC1-M is commonly used in various electronic devices that require high-capacity data storage, such as: - Solid-state drives (SSDs) - Portable media players - Digital cameras - Smartphones - Tablets - Industrial control systems

Detailed and Complete Alternative Models

  • MT29F128G08CBABA
  • MT29F128G08CECBB
  • MT29F128G08CFABA
  • MT29F128G08CJABB
  • MT29F128G08CKABB

These alternative models offer similar specifications and functionality to the MT29F128G08EBEBBB95A3WC1-M, providing options for different application requirements.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de MT29F128G08EBEBBB95A3WC1-M en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of MT29F128G08EBEBBB95A3WC1-M in technical solutions:

Q1: What is MT29F128G08EBEBBB95A3WC1-M? A1: MT29F128G08EBEBBB95A3WC1-M is a specific model of NAND flash memory chip manufactured by Micron Technology.

Q2: What is the storage capacity of MT29F128G08EBEBBB95A3WC1-M? A2: MT29F128G08EBEBBB95A3WC1-M has a storage capacity of 128 gigabits (16 gigabytes).

Q3: What is the interface used by MT29F128G08EBEBBB95A3WC1-M? A3: MT29F128G08EBEBBB95A3WC1-M uses a standard NAND flash interface, such as ONFI (Open NAND Flash Interface) or Toggle Mode.

Q4: What are some typical applications of MT29F128G08EBEBBB95A3WC1-M? A4: MT29F128G08EBEBBB95A3WC1-M is commonly used in various technical solutions, including embedded systems, solid-state drives (SSDs), industrial automation, automotive electronics, and consumer electronics.

Q5: What is the operating voltage range of MT29F128G08EBEBBB95A3WC1-M? A5: MT29F128G08EBEBBB95A3WC1-M operates at a voltage range of 2.7V to 3.6V.

Q6: Does MT29F128G08EBEBBB95A3WC1-M support hardware data protection features? A6: Yes, MT29F128G08EBEBBB95A3WC1-M supports various hardware data protection features like ECC (Error Correction Code), wear leveling, and bad block management.

Q7: What is the maximum data transfer rate of MT29F128G08EBEBBB95A3WC1-M? A7: The maximum data transfer rate of MT29F128G08EBEBBB95A3WC1-M depends on the specific interface used, but it can typically achieve speeds of up to several hundred megabytes per second.

Q8: Can MT29F128G08EBEBBB95A3WC1-M operate in extreme temperature conditions? A8: Yes, MT29F128G08EBEBBB95A3WC1-M is designed to operate reliably in a wide range of temperature conditions, including both industrial and automotive-grade temperature ranges.

Q9: Is MT29F128G08EBEBBB95A3WC1-M compatible with different operating systems? A9: Yes, MT29F128G08EBEBBB95A3WC1-M is compatible with various operating systems, including Linux, Windows, and real-time operating systems (RTOS).

Q10: Are there any specific reliability features in MT29F128G08EBEBBB95A3WC1-M? A10: Yes, MT29F128G08EBEBBB95A3WC1-M incorporates advanced reliability features such as power loss protection, static and dynamic wear leveling, and error correction algorithms to ensure data integrity and longevity.

Please note that the answers provided here are general and may vary depending on the specific implementation and requirements of the technical solution.