MT29F1G08ABAEAH4-AATX:E

Product Overview

Category: Memory Device
Use: Data storage and retrieval
Characteristics: High capacity, fast access speed
Package: Integrated circuit (IC)
Essence: Non-volatile memory
Packaging/Quantity: Individual IC package

Specifications

• Model: MT29F1G08ABAEAH4-AATX:E
• Capacity: 1 gigabit (1 Gb)
• Interface: Parallel
• Voltage: 3.3V
• Access Time: 25 ns
• Operating Temperature: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

The MT29F1G08ABAEAH4-AATX:E has a total of 48 pins. The pin configuration is as follows:

1. VCCQ: Power supply for I/O buffers
2. DQ0-DQ7: Data input/output pins
3. A0-A18: Address input pins
4. WE#: Write enable control signal
5. CE#: Chip enable control signal
6. RE#: Read enable control signal
7. CLE: Command latch enable control signal
8. ALE: Address latch enable control signal
9. WP#: Write protect control signal
10. R/B#: Ready/busy status output
11. VSSQ: Ground for I/O buffers
12. NC: No connection

(Continued for the remaining pins...)

Functional Features

• High-speed data transfer
• Low power consumption
• Error correction capability
• Block erase and program operations
• Automatic sleep mode for power saving
• Enhanced data protection mechanisms

Advantages

• Large storage capacity
• Fast access speed
• Reliable data retention
• Low power consumption
• Compact package size

Disadvantages

• Limited endurance (limited number of erase/write cycles)
• Higher cost compared to other memory technologies

Working Principles

The MT29F1G08ABAEAH4-AATX:E is based on NAND flash memory technology. It stores data in a non-volatile manner, meaning the data remains intact even when power is removed. The memory cells are organized into blocks, which can be individually erased or programmed. The device uses a combination of electrical signals and control logic to perform read, write, and erase operations.

Detailed Application Field Plans

The MT29F1G08ABAEAH4-AATX:E is widely used in various electronic devices that require non-volatile data storage, such as:

• Solid-state drives (SSDs)
• USB flash drives
• Digital cameras
• Mobile phones
• Tablets
• Industrial control systems

Alternative Models

Here are some alternative models that offer similar functionality:

1. MT29F2G08ABAEAWP-IT:E
2. S34ML01G200TFI000
3. IS43TR16256AL-125KBLI

These models provide comparable specifications and can be considered as alternatives to the MT29F1G08ABAEAH4-AATX:E.

In conclusion, the MT29F1G08ABAEAH4-AATX:E is a high-capacity NAND flash memory device with fast access speed and reliable data storage capabilities. It finds applications in various electronic devices and offers advantages such as large storage capacity and low power consumption. However, it has limitations in terms of endurance and cost.