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MT29F256G08CBCBBJ4-37:B
Product Overview
Category
The MT29F256G08CBCBBJ4-37:B belongs to the category of NAND flash memory.
Use
This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).
Characteristics
- High storage capacity: The MT29F256G08CBCBBJ4-37:B offers a storage capacity of 256 gigabytes (GB), allowing for ample space to store large amounts of data.
- Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
- Reliable performance: The product is designed to deliver reliable performance, ensuring data integrity and durability.
- Low power consumption: The MT29F256G08CBCBBJ4-37:B is energy-efficient, consuming minimal power during operation.
- Compact package: It comes in a compact form factor, making it suitable for integration into small-sized electronic devices.
- RoHS compliant: This product adheres to the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental friendliness.
Package and Quantity
The MT29F256G08CBCBBJ4-37:B is typically packaged in a surface-mount ball grid array (BGA) package. Each package contains one unit of the NAND flash memory.
Specifications
- Memory Type: NAND Flash
- Storage Capacity: 256 GB
- Interface: Universal Flash Storage (UFS)
- Voltage Supply: 2.7V - 3.6V
- Operating Temperature Range: -40°C to +85°C
- Data Transfer Rate: Up to 600 megabytes per second (MB/s)
- Erase/Program Cycles: Up to 10,000 cycles
Detailed Pin Configuration
The MT29F256G08CBCBBJ4-37:B has a total of 48 pins. The pin configuration is as follows:
- VCCQ
- VCC
- GND
- CE#
- RE#
- WE#
- CLE
- ALE
- WP#
- R/B#
- DQS
- DM
- DQ0
- DQ1
- DQ2
- DQ3
- DQ4
- DQ5
- DQ6
- DQ7
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
Functional Features
- Page Read/Program/Erase: The MT29F256G08CBCBBJ4-37:B allows for efficient reading, programming, and erasing of data at the page level.
- Block Management: It incorporates advanced block management techniques to optimize performance and extend the lifespan of the memory.
- Error Correction Code (ECC): This NAND flash memory utilizes ECC algorithms to detect and correct errors, ensuring data integrity.
- Wear-Leveling: The product employs wear-leveling algorithms to evenly distribute write operations across the memory cells, preventing premature wear-out.
- Bad Block Management: It includes mechanisms to identify and manage bad blocks, enhancing overall reliability.
Advantages and Disadvantages
Advantages
- High storage capacity enables the storage of large amounts of data.
- Fast data transfer rate allows for quick access to stored information.
- Reliable performance ensures data integrity and durability.
- Low power consumption contributes to energy efficiency.
- Compact package facilitates integration into small-sized electronic devices.
Disadvantages
- Relatively higher cost compared to lower-capacity NAND flash memory options.
- Limited erase/program cycles may pose a constraint in certain high-write applications.
Working Principles
The MT29F256G08CBCBBJ4-37:B operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells, each capable of storing multiple bits of data. These cells are organized into pages and blocks, with each page typically containing several kilobytes (KB) of data. The memory cells store data by trapping electric charges within their floating gates.
To read data, the memory controller applies appropriate voltages to the selected memory cells, allowing the charge levels to be sensed and converted into digital data. Programming involves applying specific voltage levels to program the desired charge states
Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de MT29F256G08CBCBBJ4-37:B en soluciones técnicas
Question: What is the capacity of the MT29F256G08CBCBBJ4-37:B?
Answer: The MT29F256G08CBCBBJ4-37:B has a capacity of 256 gigabits (32 gigabytes).Question: What is the operating voltage range for this memory device?
Answer: The operating voltage range for the MT29F256G08CBCBBJ4-37:B is typically between 2.7V and 3.6V.Question: What is the interface used by this memory device?
Answer: The MT29F256G08CBCBBJ4-37:B uses a standard NAND flash interface.Question: What is the maximum data transfer rate supported by this memory device?
Answer: The MT29F256G08CBCBBJ4-37:B supports a maximum data transfer rate of up to 400 megabytes per second.Question: Can this memory device be used in industrial applications?
Answer: Yes, the MT29F256G08CBCBBJ4-37:B is designed for industrial-grade applications and can withstand harsh environments.Question: Does this memory device support wear-leveling algorithms?
Answer: Yes, the MT29F256G08CBCBBJ4-37:B supports wear-leveling algorithms to ensure even distribution of write/erase cycles across the memory cells.Question: What is the typical endurance rating for this memory device?
Answer: The MT29F256G08CBCBBJ4-37:B has a typical endurance rating of 10,000 program/erase cycles per block.Question: Is this memory device compatible with existing NAND flash controllers?
Answer: Yes, the MT29F256G08CBCBBJ4-37:B is designed to be compatible with standard NAND flash controllers.Question: Can this memory device operate in a wide temperature range?
Answer: Yes, the MT29F256G08CBCBBJ4-37:B is rated for operation in temperatures ranging from -40°C to 85°C.Question: What is the package type of this memory device?
Answer: The MT29F256G08CBCBBJ4-37:B comes in a standard BGA (Ball Grid Array) package.