MT29F256G08CMCGBJ4-37R:G TR

Product Overview

Category

The MT29F256G08CMCGBJ4-37R:G TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F256G08CMCGBJ4-37R:G TR offers a storage capacity of 256 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance, ensuring data integrity and durability.
• Low power consumption: The MT29F256G08CMCGBJ4-37R:G TR is energy-efficient, consuming minimal power during operation.
• Compact package: This NAND flash memory comes in a compact package, making it suitable for integration into small-sized electronic devices.
• RoHS compliant: It adheres to the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental friendliness.

Packaging/Quantity

The MT29F256G08CMCGBJ4-37R:G TR is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on customer requirements.

Specifications

• Memory type: NAND flash
• Storage capacity: 256 GB
• Interface: Serial Peripheral Interface (SPI)
• Supply voltage: 2.7V - 3.6V
• Operating temperature range: -40°C to +85°C
• Package dimensions: 14mm x 18mm
• Package type: Ball Grid Array (BGA)

Detailed Pin Configuration

The MT29F256G08CMCGBJ4-37R:G TR has a specific pin configuration as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. CE - Chip enable
4. CLE - Command latch enable
5. ALE - Address latch enable
6. RE - Read enable
7. WE - Write enable
8. R/B# - Ready/Busy status
9. DQ0-DQ7 - Data input/output lines
10. WP# - Write protect
11. RST# - Reset
12. NC - No connection

Functional Features

• Page-level operations: The NAND flash memory supports page-level read, program, and erase operations, allowing for efficient data management.
• Error correction: It incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear leveling: The product employs wear leveling algorithms to distribute write operations evenly across memory blocks, extending the lifespan of the device.
• Bad block management: It includes mechanisms to identify and manage bad blocks, preventing data loss and maintaining optimal performance.

Advantages and Disadvantages

Advantages

• High storage capacity enables extensive data storage.
• Fast data transfer rate allows for quick access to stored information.
• Reliable performance ensures data integrity and durability.
• Low power consumption contributes to energy efficiency.
• Compact package facilitates integration into small-sized electronic devices.

Disadvantages

• Relatively higher cost compared to other types of memory.
• Limited endurance due to the finite number of program/erase cycles.

Working Principles

The MT29F256G08CMCGBJ4-37R:G TR utilizes NAND flash technology, which stores data in memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. To read data, the memory controller applies voltages to specific cells and measures the resulting current flow. Programming and erasing operations involve applying higher voltages to modify the charge level on the floating gates.

Detailed Application Field Plans

The MT29F256G08CMCGBJ4-37R:G TR finds applications in various electronic devices that require high-capacity data storage. Some potential application fields include: - Smartphones and tablets - Digital cameras and camcorders - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F128G08CBACAWP-IT: This alternative model offers a storage capacity of 128 GB and features similar characteristics to the MT29F256G08CMCGBJ4-37R:G TR.
2. MT29F512G08CKCABWP-12IT: With a larger storage capacity of 512 GB, this alternative model provides increased memory space for data storage.