Consulte las especificaciones para obtener detalles del producto.
MT29F256G08EBCAGB16A3WC1-M
Basic Information Overview
- Category: Memory Device
- Use: Data storage and retrieval
- Characteristics: Non-volatile, high capacity, fast access speed
- Package: BGA (Ball Grid Array)
- Essence: NAND Flash memory
- Packaging/Quantity: Single unit
Specifications
- Capacity: 256GB
- Interface: Toggle Mode 2.0
- Voltage Supply: 2.7V - 3.6V
- Operating Temperature: -40°C to +85°C
- Read/Write Speed: Up to 400MB/s
- Erase Block Size: 128KB
- Endurance: 3,000 Program/Erase cycles
Detailed Pin Configuration
The MT29F256G08EBCAGB16A3WC1-M has a total of 48 pins. The pin configuration is as follows:
- VCCQ
- GND
- RE#
- WE#
- CLE
- ALE
- CE#
- WP#
- R/B#
- DQ0
- DQ1
- DQ2
- DQ3
- DQ4
- DQ5
- DQ6
- DQ7
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
Functional Features
- High-speed data transfer
- Reliable and durable storage
- Low power consumption
- Error correction and wear-leveling algorithms
- Block management for efficient data organization
Advantages
- Large storage capacity
- Fast read/write speeds
- Compact BGA package
- Wide operating temperature range
- High endurance for frequent program/erase cycles
Disadvantages
- Relatively high cost compared to other memory technologies
- Limited lifespan due to finite program/erase cycles
- Susceptible to physical damage if mishandled
Working Principles
The MT29F256G08EBCAGB16A3WC1-M is based on NAND Flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density storage. Data is written to and read from the memory cells using electrical charges. The memory controller manages the operations and ensures data integrity.
Detailed Application Field Plans
The MT29F256G08EBCAGB16A3WC1-M is widely used in various applications that require large-capacity non-volatile storage. Some common application fields include: - Solid-state drives (SSDs) - Embedded systems - Consumer electronics (e.g., smartphones, tablets) - Automotive infotainment systems - Industrial control systems
Detailed and Complete Alternative Models
- MT29F256G08EBDAGB16A3WC1
- MT29F256G08EBDABH16A3WC1
- MT29F256G08EBDABH16A3WC2
- MT29F256G08EBDABH16A3WC3
- MT29F256G08EBDABH16A3WC4
These alternative models offer similar specifications and functionality, providing options for different design requirements.
Word count: 346 words
Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de MT29F256G08EBCAGB16A3WC1-M en soluciones técnicas
1. What is the capacity of the MT29F256G08EBCAGB16A3WC1-M flash memory module?
The MT29F256G08EBCAGB16A3WC1-M flash memory module has a capacity of 256 gigabits (32 gigabytes).
2. What is the interface used by the MT29F256G08EBCAGB16A3WC1-M module?
The MT29F256G08EBCAGB16A3WC1-M module uses the NAND Flash interface.
3. What is the operating voltage range for the MT29F256G08EBCAGB16A3WC1-M module?
The operating voltage range for the MT29F256G08EBCAGB16A3WC1-M module is typically between 2.7V and 3.6V.
4. What is the maximum data transfer rate supported by the MT29F256G08EBCAGB16A3WC1-M module?
The MT29F256G08EBCAGB16A3WC1-M module supports a maximum data transfer rate of up to 200 megabytes per second.
5. Does the MT29F256G08EBCAGB16A3WC1-M module support hardware ECC (Error Correction Code)?
Yes, the MT29F256G08EBCAGB16A3WC1-M module supports hardware ECC for improved data integrity.
6. Can the MT29F256G08EBCAGB16A3WC1-M module be used in industrial temperature environments?
Yes, the MT29F256G08EBCAGB16A3WC1-M module is designed to operate reliably in industrial temperature environments ranging from -40°C to +85°C.
7. Is the MT29F256G08EBCAGB16A3WC1-M module compatible with various operating systems?
Yes, the MT29F256G08EBCAGB16A3WC1-M module is compatible with various operating systems, including Windows, Linux, and embedded systems.
8. What is the typical lifespan of the MT29F256G08EBCAGB16A3WC1-M module?
The MT29F256G08EBCAGB16A3WC1-M module has a typical lifespan of 100,000 program/erase cycles.
9. Does the MT29F256G08EBCAGB16A3WC1-M module support wear-leveling algorithms?
Yes, the MT29F256G08EBCAGB16A3WC1-M module supports wear-leveling algorithms to evenly distribute data writes across the memory cells, extending the overall lifespan of the module.
10. Can the MT29F256G08EBCAGB16A3WC1-M module be used in automotive applications?
Yes, the MT29F256G08EBCAGB16A3WC1-M module is suitable for automotive applications and meets the necessary requirements for reliability and temperature range.