MT29F512G08EEHAFJ4-3R:A TR

Product Overview

Category

MT29F512G08EEHAFJ4-3R:A TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F512G08EEHAFJ4-3R:A TR offers a storage capacity of 512 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its advanced technology, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance with low power consumption, ensuring efficient operation and extended battery life in portable devices.
• Compact package: The MT29F512G08EEHAFJ4-3R:A TR comes in a compact package, making it suitable for integration into small form factor devices.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances (RoHS) directive, ensuring it is environmentally friendly.

Packaging/Quantity

The MT29F512G08EEHAFJ4-3R:A TR is typically packaged in a surface mount package (SMT) and is available in quantities suitable for both individual and bulk purchases.

Specifications

• Storage Capacity: 512 GB
• Interface: NAND Flash
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. CE#: Chip enable
5. CLE: Command latch enable
6. ALE: Address latch enable
7. RE#: Read enable
8. WE#: Write enable
9. R/B#: Ready/busy status
10. DQ0-DQ15: Data input/output

(Note: The pin configuration may vary depending on the specific package variant.)

Functional Features

• Page Program: Allows data to be written in page-sized increments, enhancing write efficiency.
• Block Erase: Enables erasing of data in large block sizes, improving overall memory management.
• Read and Write Protection: Provides security features to protect stored data from unauthorized access or modification.
• Wear-Leveling: Distributes write operations evenly across memory cells, extending the lifespan of the NAND flash memory.
• Error Correction Code (ECC): Implements error correction techniques to ensure data integrity and reliability.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate enables quick access to stored information.
• Reliable performance with low power consumption.
• Compact package suitable for small form factor devices.
• RoHS compliant, environmentally friendly product.

Disadvantages

• Relatively higher cost compared to other types of memory.
• Limited endurance due to the finite number of program/erase cycles.

Working Principles

The MT29F512G08EEHAFJ4-3R:A TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of data using a floating-gate transistor. When writing data, an electrical charge is applied to the floating gate, altering its state and storing the desired information. Reading data involves detecting the charge level in each memory cell to retrieve the stored data.

Detailed Application Field Plans

The MT29F512G08EEHAFJ4-3R:A TR is widely used in various electronic devices, including: - Smartphones and tablets for storing operating systems, applications, and user data. - Digital cameras for storing high-resolution photos and videos. - Solid-state drives (SSDs) for high-speed data storage in laptops and desktop computers. - Industrial control systems for reliable and durable data storage.

Detailed and Complete Alternative Models

1. MT29F256G08CJAAA
2. MT29F512G08CKCAB
3. MT29F1T08EMDHCJ4-6RIT

(Note: The list of alternative models may vary based on availability and specific requirements.)

In conclusion, the MT29F512G08EEHAFJ4-3R:A TR is a high-capacity NAND flash memory product that offers fast data transfer, reliability, and compact packaging. It finds extensive use in various electronic devices and provides advantages such as high storage capacity and low power consumption. However, it has limitations in terms of cost and endurance. Its working principle