MT53D512M32D2NP-062 WT ES:D TR

Basic Information Overview

• Category: Memory module
• Use: Storage and retrieval of digital information in electronic devices
• Characteristics:
  • High capacity
  • Fast data transfer rate
  • Low power consumption
• Package: Integrated circuit (IC) package
• Essence: Non-volatile memory technology
• Packaging/Quantity: Single unit per package

Specifications

• Model: MT53D512M32D2NP-062 WT ES:D TR
• Capacity: 512 megabytes (MB)
• Type: Double Data Rate 2 (DDR2) Synchronous Dynamic Random-Access Memory (SDRAM)
• Speed: 667 megahertz (MHz)
• Voltage: 1.8 volts (V)
• Organization: 512M words x 32 bits
• Interface: 240-pin dual in-line memory module (DIMM)

Detailed Pin Configuration

The MT53D512M32D2NP-062 WT ES:D TR memory module has a total of 240 pins. The pin configuration is as follows:

• Pins 1 to 120: Address lines (A0-A59)
• Pins 121 to 232: Data lines (DQ0-DQ63)
• Pins 233 to 240: Control lines (RAS#, CAS#, WE#, CS#, CKE, ODT, BA0, BA1)

Functional Features

• High-speed data transfer: The DDR2 SDRAM technology allows for fast and efficient data transfer between the memory module and the electronic device.
• Non-volatile storage: The memory module retains stored data even when power is removed, ensuring data integrity.
• Low power consumption: The module operates at low voltage levels, reducing power consumption and heat generation.

Advantages and Disadvantages

Advantages: - High capacity: The 512MB capacity allows for storing large amounts of data. - Fast data transfer rate: The 667MHz speed enables quick access to stored information. - Low power consumption: Helps prolong battery life in portable devices.

Disadvantages: - Limited compatibility: The module may not be compatible with all electronic devices due to differences in interface and voltage requirements. - Relatively small capacity: Compared to newer memory modules, the 512MB capacity may be considered low for certain applications.

Working Principles

The MT53D512M32D2NP-062 WT ES:D TR memory module operates based on DDR2 SDRAM technology. It stores digital information in an array of capacitors, which can hold a charge representing binary data (0s and 1s). The module uses synchronous clocking to read and write data at high speeds. When the device sends a command, the memory controller activates the appropriate circuitry to access the requested data.

Detailed Application Field Plans

The MT53D512M32D2NP-062 WT ES:D TR memory module is commonly used in various electronic devices, including: - Personal computers - Laptops - Servers - Networking equipment - Gaming consoles

Detailed and Complete Alternative Models

• MT53D512M32D2NP-062 WT ES:D TR is part of the MT53D series by a specific manufacturer. Other models within this series may have different capacities, speeds, or form factors.
• Alternative models from different manufacturers include:
  • XYZ1234 DDR2 SDRAM 512MB DIMM
  • ABC5678 DDR2 Memory Module 512MB

Note: The above alternative models are provided for illustrative purposes and may not represent actual products.

This entry provides an overview of the MT53D512M32D2NP-062 WT ES:D TR memory module, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.