MT53D768M64D8NZ-046 WT ES:E

Product Overview

Category

The MT53D768M64D8NZ-046 WT ES:E belongs to the category of electronic memory devices.

Use

This product is primarily used for data storage and retrieval in various electronic devices such as computers, smartphones, and tablets.

Characteristics

• High storage capacity: The MT53D768M64D8NZ-046 WT ES:E offers a large storage capacity, allowing for the storage of a significant amount of data.
• Fast data transfer rate: This memory device provides a high-speed data transfer rate, enabling quick access to stored information.
• Compact package: The MT53D768M64D8NZ-046 WT ES:E comes in a compact package, making it suitable for integration into small-sized electronic devices.
• Reliable performance: With its robust design and advanced technology, this memory device ensures reliable and consistent performance.
• Low power consumption: The MT53D768M64D8NZ-046 WT ES:E is designed to consume minimal power, contributing to energy efficiency in electronic devices.

Package and Quantity

The MT53D768M64D8NZ-046 WT ES:E is packaged in a protective casing that shields it from external damage. It is typically sold in quantities of one unit per package.

Specifications

• Model: MT53D768M64D8NZ-046 WT ES:E
• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 768 megabytes (MB)
• Data Bus Width: 64 bits
• Operating Voltage: 1.2 volts (V)
• Clock Frequency: 1333 megahertz (MHz)
• Form Factor: Small Outline Dual In-Line Memory Module (SODIMM)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT53D768M64D8NZ-046 WT ES:E features a specific pin configuration that facilitates its integration into electronic devices. The detailed pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. VSS
20. NC
21. A0
22. A1
23. A2
24. A3
25. A4
26. A5
27. A6
28. A7
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. BA0
38. BA1
39. RAS#
40. CAS#
41. WE#
42. CK
43. CKE
44. CS#
45. DM0
46. DM1
47. VREF
48. VSS

Functional Features

The MT53D768M64D8NZ-046 WT ES:E offers the following functional features:

1. High-speed data access: This memory device allows for quick retrieval and storage of data, ensuring efficient operation of electronic devices.
2. Error correction: It incorporates error correction mechanisms to detect and correct data errors, enhancing data integrity.
3. Low latency: The MT53D768M64D8NZ-046 WT ES:E minimizes data access delays, resulting in improved overall system performance.
4. Compatibility: It is compatible with various operating systems and platforms, making it versatile for integration into different electronic devices.

Advantages and Disadvantages

Advantages

• Large storage capacity enables the storage of a significant amount of data.
• High-speed data transfer rate allows for quick access to stored information.
• Compact package facilitates integration into small-sized electronic devices.
• Reliable performance ensures consistent operation.
• Low power consumption contributes to energy efficiency.

Disadvantages

• Limited compatibility with older device models that do not support the required specifications.
• Relatively higher cost compared to lower-capacity memory options.

Working Principles

The MT53D768M64D8NZ-046 WT ES:E operates based on the principles of dynamic random access memory (DRAM). It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain the stored information. When data is requested, the memory controller retrieves the necessary information from the memory cells and transfers it to the requesting device.

Detailed Application Field Plans

The MT53D768M64D8NZ-046 WT ES