Micron Technology Inc.
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NAND128W3A0BN6E

NAND128W3A0BN6E

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Data storage and retrieval
  • Characteristics: Non-volatile, high-density, low-power consumption
  • Package: Surface Mount Technology (SMT)
  • Essence: NAND flash memory chip
  • Packaging/Quantity: Tape and reel packaging, quantity varies

Specifications

  • Manufacturer: Unknown
  • Part Number: NAND128W3A0BN6E
  • Memory Type: NAND Flash
  • Capacity: 128 gigabits (16 gigabytes)
  • Interface: Serial Peripheral Interface (SPI)
  • Voltage Supply: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Package/Case: WFBGA-63

Detailed Pin Configuration

The NAND128W3A0BN6E has a total of 63 pins arranged as follows:

  1. VCC: Power supply voltage
  2. GND: Ground
  3. /CE: Chip enable input
  4. /WP: Write protect input
  5. /HOLD: Hold input
  6. IO0: Data input/output bit 0
  7. IO1: Data input/output bit 1
  8. IO2: Data input/output bit 2
  9. IO3: Data input/output bit 3
  10. IO4: Data input/output bit 4
  11. IO5: Data input/output bit 5
  12. IO6: Data input/output bit 6
  13. IO7: Data input/output bit 7
  14. R/B: Ready/busy output
  15. A0: Address input bit 0
  16. A1: Address input bit 1
  17. A2: Address input bit 2
  18. A3: Address input bit 3
  19. A4: Address input bit 4
  20. A5: Address input bit 5
  21. A6: Address input bit 6
  22. A7: Address input bit 7
  23. A8: Address input bit 8
  24. A9: Address input bit 9
  25. A10: Address input bit 10
  26. A11: Address input bit 11
  27. A12: Address input bit 12
  28. A13: Address input bit 13
  29. A14: Address input bit 14
  30. A15: Address input bit 15
  31. A16: Address input bit 16
  32. A17: Address input bit 17
  33. A18: Address input bit 18
  34. A19: Address input bit 19
  35. A20: Address input bit 20
  36. A21: Address input bit 21
  37. A22: Address input bit 22
  38. A23: Address input bit 23
  39. A24: Address input bit 24
  40. A25: Address input bit 25
  41. A26: Address input bit 26
  42. A27: Address input bit 27
  43. A28: Address input bit 28
  44. A29: Address input bit 29
  45. A30: Address input bit 30
  46. A31: Address input bit 31
  47. /RE: Read enable input
  48. /WE: Write enable input
  49. CLE: Command latch enable input
  50. ALE: Address latch enable input
  51. WP#/ACC: Write protect/acceleration input
  52. RST#: Reset input
  53. VCCQ: Power supply voltage for I/O pins
  54. VSSQ: Ground for I/O pins
  55. NC: No connection
  56. NC: No connection
  57. NC: No connection
  58. NC: No connection
  59. NC: No connection
  60. NC: No connection
  61. NC: No connection
  62. NC: No connection
  63. NC: No connection

Functional Features

  • High-speed data transfer rate
  • Error correction code (ECC) support
  • Block erase and program operations
  • Page read and program operations
  • Internal data organization with multiple planes and blocks
  • Wear-leveling algorithm for extended lifespan
  • Bad block management

Advantages and Disadvantages

Advantages: - High storage capacity - Non-volatile memory retains data even without power - Low power consumption - Compact package size - Fast data transfer rate

Disadvantages: - Limited endurance due to finite write cycles - Relatively higher cost compared to other memory technologies - Susceptible to physical damage from electrostatic discharge (ESD)

Working Principles

The NAND128W3A0BN6E is based on NAND

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de NAND128W3A0BN6E en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of NAND128W3A0BN6E in technical solutions:

  1. Q: What is NAND128W3A0BN6E? A: NAND128W3A0BN6E is a specific model of NAND flash memory chip manufactured by a particular company.

  2. Q: What are the key features of NAND128W3A0BN6E? A: Some key features of NAND128W3A0BN6E include a storage capacity of 128GB, a high-speed interface, and low power consumption.

  3. Q: In what type of devices can NAND128W3A0BN6E be used? A: NAND128W3A0BN6E can be used in various devices such as smartphones, tablets, digital cameras, portable media players, and solid-state drives (SSDs).

  4. Q: What are the advantages of using NAND128W3A0BN6E in technical solutions? A: The advantages of using NAND128W3A0BN6E include its large storage capacity, fast data transfer rates, and reliability.

  5. Q: Can NAND128W3A0BN6E be easily integrated into existing systems? A: Yes, NAND128W3A0BN6E is designed to be compatible with standard interfaces and protocols, making it relatively easy to integrate into existing systems.

  6. Q: Is NAND128W3A0BN6E suitable for applications that require high endurance? A: Yes, NAND128W3A0BN6E has a high endurance rating, making it suitable for applications that involve frequent read/write operations.

  7. Q: Does NAND128W3A0BN6E support error correction codes (ECC)? A: Yes, NAND128W3A0BN6E supports ECC, which helps in detecting and correcting errors that may occur during data transmission.

  8. Q: What is the operating temperature range of NAND128W3A0BN6E? A: The operating temperature range of NAND128W3A0BN6E typically falls between -40°C to +85°C, making it suitable for a wide range of environments.

  9. Q: Can NAND128W3A0BN6E be used in automotive applications? A: Yes, NAND128W3A0BN6E is designed to meet the stringent requirements of automotive applications, including extended temperature ranges and high reliability.

  10. Q: Are there any specific design considerations when using NAND128W3A0BN6E? A: Yes, some design considerations include power supply stability, signal integrity, and proper implementation of error correction mechanisms.

Please note that the answers provided here are general and may vary depending on the specific application and requirements.