1N5925PE3/TR8 - Semiconductor Diode

Basic Information Overview

• Category: Semiconductor Diode
• Use: Rectification and voltage regulation
• Characteristics: High efficiency, low forward voltage drop
• Package: DO-41
• Essence: Silicon rectifier diode
• Packaging/Quantity: Tape & Reel, 5000 units per reel

Specifications

• Voltage Rating: 3.0V
• Current Rating: 3A
• Forward Voltage Drop: 0.49V @ 3A
• Reverse Leakage Current: 10µA @ 25°C
• Operating Temperature Range: -65°C to +175°C

Detailed Pin Configuration

The 1N5925PE3/TR8 is a two-terminal device with an anode and a cathode. The cathode is marked by a band on the body of the diode.

Functional Features

• Efficient rectification of AC to DC
• Low forward voltage drop minimizes power loss
• Fast switching characteristics

Advantages and Disadvantages

Advantages

• High efficiency
• Low forward voltage drop
• Fast response time

Disadvantages

• Limited reverse voltage capability
• Sensitivity to temperature variations

Working Principles

The 1N5925PE3/TR8 operates based on the principle of semiconductor junction rectification. When a forward bias is applied, it allows current to flow, while in reverse bias, it blocks the current flow.

Detailed Application Field Plans

This diode is commonly used in power supplies, voltage regulators, and rectifier circuits due to its efficient rectification and voltage regulation capabilities. It is also utilized in automotive electronics and industrial control systems.

Detailed and Complete Alternative Models

• 1N5817: Schottky Barrier Rectifier
• 1N4001: General Purpose Rectifier
• 1N5399: Standard Recovery Rectifier

This content provides a comprehensive overview of the 1N5925PE3/TR8 semiconductor diode, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.