1N5935P/TR8 - Semiconductor Diode

Basic Information Overview

• Category: Semiconductor Diode
• Use: Rectification and voltage regulation
• Characteristics: High current capability, low forward voltage drop
• Package: DO-41 (Axial Lead)
• Essence: Power rectification and voltage regulation
• Packaging/Quantity: Typically available in reels of 500 or 1000 units

Specifications

• Voltage Rating: 3.0V
• Current Rating: 1A
• Forward Voltage Drop: 1V at 1A
• Reverse Leakage Current: 10µA
• Operating Temperature Range: -65°C to +175°C

Detailed Pin Configuration

The 1N5935P/TR8 is a two-terminal device with an anode and a cathode. In the DO-41 package, the anode is denoted by a band around one end of the diode.

Functional Features

• Efficient rectification of AC to DC
• Low forward voltage drop minimizes power loss
• High current capability allows for use in various power applications
• Fast switching characteristics

Advantages and Disadvantages

Advantages

• High current capability
• Low forward voltage drop
• Fast switching speed
• Wide operating temperature range

Disadvantages

• Relatively higher reverse leakage current compared to some other diodes
• Larger physical size compared to surface mount diodes

Working Principles

The 1N5935P/TR8 operates based on the principles of semiconductor physics, utilizing the properties of P-N junctions to allow current flow in one direction while blocking it in the reverse direction. When a positive voltage is applied to the anode with respect to the cathode, the diode conducts, allowing current to flow. In the reverse bias condition, the diode blocks the current flow.

Detailed Application Field Plans

The 1N5935P/TR8 is commonly used in various power supply and voltage regulation applications, including: - AC to DC rectification in power supplies - Voltage clamping and protection circuits - Reverse polarity protection - Battery charging circuits

Detailed and Complete Alternative Models

Some alternative models to the 1N5935P/TR8 include: - 1N4001: A general-purpose diode with similar voltage and current ratings - 1N5408: Higher voltage and current rating diode suitable for power applications - 1N5819: Schottky diode with lower forward voltage drop

This completes the entry for the 1N5935P/TR8 semiconductor diode, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.