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2N5879 Transistor
Product Overview
Category:
The 2N5879 is a high-power NPN silicon transistor.
Use:
It is commonly used in power amplifier and switching applications.
Characteristics:
- High power handling capability
- Low collector-emitter saturation voltage
- Fast switching speed
Package:
The 2N5879 is typically available in a TO-3 metal can package.
Essence:
This transistor is essential for high-power electronic circuits and applications.
Packaging/Quantity:
The 2N5879 is usually sold individually or in small quantities, depending on the supplier.
Specifications
- Maximum Collector-Emitter Voltage: 80V
- Maximum Collector Current: 20A
- Power Dissipation: 150W
- Transition Frequency: 4MHz
Detailed Pin Configuration
The 2N5879 transistor has three pins: 1. Base (B) 2. Emitter (E) 3. Collector (C)
Functional Features
- High power amplification capability
- Fast switching speed
- Low saturation voltage
Advantages and Disadvantages
Advantages
- High power handling capacity
- Suitable for high-frequency applications
- Low collector-emitter saturation voltage
Disadvantages
- Relatively large package size
- Limited availability compared to more common transistors
Working Principles
The 2N5879 operates as a current-controlled switch or amplifier. When a small current flows into the base terminal, it controls a much larger current flow between the collector and emitter terminals.
Detailed Application Field Plans
The 2N5879 is commonly used in the following applications: - High-power audio amplifiers - Switching power supplies - RF power amplifiers
Detailed and Complete Alternative Models
Some alternative models to the 2N5879 include: - MJL21193 - 2SC5200 - MJL3281
In conclusion, the 2N5879 transistor is a high-power NPN silicon transistor with excellent power handling capabilities, making it suitable for various high-power electronic applications.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de 2N5879 en soluciones técnicas
What is the 2N5879 transistor used for?
- The 2N5879 transistor is commonly used for high-frequency amplifier and oscillator applications.
What are the key specifications of the 2N5879 transistor?
- The 2N5879 transistor typically has a maximum power dissipation of 0.5 watts, a collector-base voltage of 30 volts, and a collector current of 50 milliamps.
Can the 2N5879 be used in RF amplifier circuits?
- Yes, the 2N5879 is suitable for use in RF amplifier circuits due to its high-frequency capabilities.
What are the typical operating frequencies for the 2N5879 transistor?
- The 2N5879 transistor can operate at frequencies ranging from several megahertz to several gigahertz.
Is the 2N5879 suitable for low-noise amplifier applications?
- Yes, the 2N5879 can be used as a low-noise amplifier in certain high-frequency applications.
What are the common package types for the 2N5879 transistor?
- The 2N5879 transistor is often available in metal can or surface-mount packages.
Are there any recommended biasing configurations for the 2N5879?
- Common biasing configurations for the 2N5879 include common emitter and common base configurations, depending on the specific application requirements.
Can the 2N5879 be used in push-pull amplifier designs?
- Yes, the 2N5879 can be utilized in push-pull amplifier designs for high-frequency applications.
What are the typical gain characteristics of the 2N5879 transistor?
- The 2N5879 transistor typically exhibits high gain at high frequencies, making it suitable for amplification purposes.
Are there any known limitations or considerations when using the 2N5879 in technical solutions?
- It's important to consider the operating frequency range, power dissipation, and voltage/current ratings to ensure proper performance and reliability in technical solutions.