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PMBT5550,235

PMBT5550,235

Product Overview

Category

PMBT5550,235 belongs to the category of bipolar transistors.

Use

It is commonly used as a general-purpose PNP transistor in various electronic circuits.

Characteristics

  • Low power dissipation
  • High current gain
  • Small package size

Package

PMBT5550,235 is typically available in a SOT-23 package.

Essence

The essence of PMBT5550,235 lies in its ability to amplify and switch electronic signals in a compact form factor.

Packaging/Quantity

It is usually supplied in reels with a quantity varying based on manufacturer specifications.

Specifications

  • Collector-Base Voltage (VCBO): 40V
  • Collector-Emitter Voltage (VCEO): 40V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 600mA
  • Power Dissipation (PD): 225mW
  • Transition Frequency (fT): 250MHz

Detailed Pin Configuration

PMBT5550,235 has three pins: 1. Collector (C) 2. Base (B) 3. Emitter (E)

Functional Features

  • High current gain
  • Low saturation voltage
  • Fast switching speed

Advantages

  • Small package size
  • Suitable for low-power applications
  • Wide range of operating temperatures

Disadvantages

  • Limited maximum collector current
  • Relatively low breakdown voltage

Working Principles

PMBT5550,235 operates based on the principles of bipolar junction transistors, where the flow of current is controlled by the application of a small signal at the base terminal.

Detailed Application Field Plans

PMBT5550,235 finds applications in: - Amplification circuits - Switching circuits - Oscillator circuits - Signal processing circuits

Detailed and Complete Alternative Models

Some alternative models to PMBT5550,235 include: - BC557 - 2N3906 - 2SA1015

In conclusion, PMBT5550,235 is a versatile PNP transistor with a compact package size and suitable for various low-power electronic applications.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de PMBT5550,235 en soluciones técnicas

  1. What is PMBT5550,235?

    • PMBT5550,235 is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications.
  2. What are the key specifications of PMBT5550,235?

    • The key specifications include a maximum collector current of 600mA, a maximum collector-base voltage of 40V, and a maximum power dissipation of 225mW.
  3. Can PMBT5550,235 be used for audio amplifier applications?

    • Yes, PMBT5550,235 can be used for low-power audio amplifier applications due to its moderate current and voltage ratings.
  4. Is PMBT5550,235 suitable for switching applications?

    • Yes, PMBT5550,235 is suitable for low-power switching applications due to its moderate current handling capability.
  5. What are the typical operating conditions for PMBT5550,235?

    • The typical operating conditions include a collector current of 100mA, a collector-emitter voltage of 20V, and a base current of 10mA.
  6. Can PMBT5550,235 be used in automotive electronics?

    • Yes, PMBT5550,235 can be used in automotive electronics for various control and signal processing applications.
  7. Does PMBT5550,235 require external heat sinking?

    • In most cases, PMBT5550,235 does not require external heat sinking due to its moderate power dissipation rating.
  8. What are the recommended storage conditions for PMBT5550,235?

    • It is recommended to store PMBT5550,235 in a dry environment at temperatures between -55°C and 150°C.
  9. Can PMBT5550,235 be used in battery-powered devices?

    • Yes, PMBT5550,235 can be used in battery-powered devices due to its low power consumption and moderate current requirements.
  10. Are there any application notes or reference designs available for using PMBT5550,235 in technical solutions?

    • Yes, there are application notes and reference designs available from the manufacturer that provide guidance on using PMBT5550,235 in various technical solutions.