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2SB1216T-H
Product Overview
Category:
The 2SB1216T-H belongs to the category of semiconductor devices.
Use:
It is commonly used as a power amplifier in electronic circuits.
Characteristics:
- High voltage capability
- Low collector saturation voltage
- Complementary to 2SD1819T-H
Package:
The 2SB1216T-H is typically available in a TO-220F package.
Essence:
This product is essential for amplifying electrical signals in various electronic applications.
Packaging/Quantity:
The 2SB1216T-H is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Collector-Base Voltage: 120V
- Collector Current: 3A
- Power Dissipation: 25W
- Transition Frequency: 30MHz
- Operating Temperature: -55°C to 150°C
Detailed Pin Configuration
- Emitter
- Base
- Collector
Functional Features
- High voltage capability allows for use in various power applications.
- Low collector saturation voltage ensures efficient operation.
- Complementary to 2SD1819T-H for complementary pair usage.
Advantages and Disadvantages
Advantages
- High voltage capability
- Low collector saturation voltage
- Complementary pairing available
Disadvantages
- Limited transition frequency compared to some alternatives
- May require heat sinking in high-power applications
Working Principles
The 2SB1216T-H operates as a bipolar junction transistor (BJT), utilizing the flow of charge carriers for amplification and switching of electronic signals.
Detailed Application Field Plans
The 2SB1216T-H is commonly used in audio amplifiers, power supply circuits, and other electronic systems requiring high-power amplification.
Detailed and Complete Alternative Models
- 2SB772
- 2SB1184
- 2SB1560
This completes the English editing encyclopedia entry structure for the 2SB1216T-H, providing comprehensive information about its category, use, characteristics, package, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de 2SB1216T-H en soluciones técnicas
What is the maximum collector current of 2SB1216T-H?
- The maximum collector current of 2SB1216T-H is 3A.
What is the typical voltage rating for 2SB1216T-H?
- The typical voltage rating for 2SB1216T-H is 50V.
What are the typical applications for 2SB1216T-H?
- 2SB1216T-H is commonly used in audio amplifier circuits, power management systems, and general electronic switching applications.
What is the gain (hFE) range for 2SB1216T-H?
- The gain (hFE) range for 2SB1216T-H is typically between 60 and 320.
What is the maximum power dissipation of 2SB1216T-H?
- The maximum power dissipation of 2SB1216T-H is 1.5W.
Is 2SB1216T-H suitable for high-frequency applications?
- No, 2SB1216T-H is not recommended for high-frequency applications due to its lower transition frequency.
Can 2SB1216T-H be used in a Darlington configuration?
- Yes, 2SB1216T-H can be used in a Darlington configuration to achieve higher current gain.
What are the thermal characteristics of 2SB1216T-H?
- The thermal resistance junction to case (RthJC) of 2SB1216T-H is typically 5°C/W.
Does 2SB1216T-H require a heat sink in typical operating conditions?
- It is recommended to use a heat sink when operating 2SB1216T-H near its maximum power dissipation to ensure proper thermal management.
Are there any common failure modes associated with 2SB1216T-H?
- Common failure modes for 2SB1216T-H include overcurrent, overvoltage, and excessive junction temperature, which can lead to device breakdown or degradation.